Hole confinement in quantum islands in Ga (AsSb) GaAs (AlGa) As heterostructures

S. Horst, S. Chatterjee, K. Hantke, P. J. Klar, I. Nemeth, W. Stolz, K. Volz, C. Bückers, A. Thränhardt, Stephan W Koch, W. Rühle, S. R. Johnson, J. B. Wang, Y. H. Zhang

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Abstract

Formation of self-organized Ga(AsSb) quantum islands during growth is shown to occur in a series of Ga (AsSb) GaAs (AlGa) As heterostructures, resulting in an in-plane hole confinement of several hundred meV. The shape of the in-plane confinement potential is nearly parabolic and, thus, yields almost equidistant hole energy levels. Transmission electron microscopy reveals that the quantum islands are 100 nm in diameter and exhibit an in-plane variation of the Sb concentration of more than 30%. Up to seven bound hole states are observed in the photoluminescence spectra. Time-resolved photoluminescence data are shown as function of excitation density, lattice temperature, and excitation photon energy and reveal fast carrier capture into, and relaxation within, the quantum islands. The advantages of such structures as active laser material are discussed.

Original languageEnglish (US)
Article number161101
JournalApplied Physics Letters
Volume92
Issue number16
DOIs
StatePublished - 2008
Externally publishedYes

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algae
photoluminescence
laser materials
excitation
energy levels
transmission electron microscopy
photons
temperature
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Horst, S., Chatterjee, S., Hantke, K., Klar, P. J., Nemeth, I., Stolz, W., ... Zhang, Y. H. (2008). Hole confinement in quantum islands in Ga (AsSb) GaAs (AlGa) As heterostructures. Applied Physics Letters, 92(16), [161101]. https://doi.org/10.1063/1.2913767

Hole confinement in quantum islands in Ga (AsSb) GaAs (AlGa) As heterostructures. / Horst, S.; Chatterjee, S.; Hantke, K.; Klar, P. J.; Nemeth, I.; Stolz, W.; Volz, K.; Bückers, C.; Thränhardt, A.; Koch, Stephan W; Rühle, W.; Johnson, S. R.; Wang, J. B.; Zhang, Y. H.

In: Applied Physics Letters, Vol. 92, No. 16, 161101, 2008.

Research output: Contribution to journalArticle

Horst, S, Chatterjee, S, Hantke, K, Klar, PJ, Nemeth, I, Stolz, W, Volz, K, Bückers, C, Thränhardt, A, Koch, SW, Rühle, W, Johnson, SR, Wang, JB & Zhang, YH 2008, 'Hole confinement in quantum islands in Ga (AsSb) GaAs (AlGa) As heterostructures', Applied Physics Letters, vol. 92, no. 16, 161101. https://doi.org/10.1063/1.2913767
Horst S, Chatterjee S, Hantke K, Klar PJ, Nemeth I, Stolz W et al. Hole confinement in quantum islands in Ga (AsSb) GaAs (AlGa) As heterostructures. Applied Physics Letters. 2008;92(16). 161101. https://doi.org/10.1063/1.2913767
Horst, S. ; Chatterjee, S. ; Hantke, K. ; Klar, P. J. ; Nemeth, I. ; Stolz, W. ; Volz, K. ; Bückers, C. ; Thränhardt, A. ; Koch, Stephan W ; Rühle, W. ; Johnson, S. R. ; Wang, J. B. ; Zhang, Y. H. / Hole confinement in quantum islands in Ga (AsSb) GaAs (AlGa) As heterostructures. In: Applied Physics Letters. 2008 ; Vol. 92, No. 16.
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