How non-invasive are metal nano-apertures on a semiconductor quantum well?

J. Hetzler, M. Wegener, Galina Khitrova, H. M. Gibbs

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Summary form only given. Metal apertures, with diameters down to 100 nm, on semiconductor quantum well (QW) samples have extensively been used to obtain subwavelength optical resolution in quantum dot experiments, e.g. When preparing such samples for time-resolved experiments, we have noticed that the optical properties of the semiconductor film underneath the metal aperture do not remain unchanged. Our investigations have shown (a) that this effect is intrinsic for a QW near the surface and (b) that the interplay of optically excited carriers and the built-in electrostatic potential well underneath the aperture leads to characteristic ring structures in luminescence images.

Original languageEnglish (US)
Title of host publicationTechnical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages50-51
Number of pages2
ISBN (Print)155752663X, 9781557526632
DOIs
StatePublished - 2001
EventQuantum Electronics and Laser Science Conference, QELS 2001 - Baltimore, United States
Duration: May 6 2001May 11 2001

Other

OtherQuantum Electronics and Laser Science Conference, QELS 2001
CountryUnited States
CityBaltimore
Period5/6/015/11/01

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Radiation

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    Hetzler, J., Wegener, M., Khitrova, G., & Gibbs, H. M. (2001). How non-invasive are metal nano-apertures on a semiconductor quantum well? In Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001 (pp. 50-51). [961837] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/QELS.2001.961837