Hydrogen Peroxide Removal from Chemical–Mechanical Planarization Wastewater

Francis Dakubo, James C. Baygents, James Farrell, Francis Dakubo, James C. Baygents, James Farrell

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

The goal of this paper was to identify and investigate a practical method for removing hydrogen peroxide from wastewater generated during chemical and mechanical planarization of integrated circuits. Rates of hydrogen peroxide destruction were investigated using: 1) ultraviolet (UV) light; 2) electrochemical reduction and oxidation; 3) two activated carbon catalysts; and 4) a pyrolusite catalyst. The effects of ethylenediaminetetraaceticacid (EDTA), ethylenediamine (ED), and dissolved copper ions on rates of H2O2 destruction were also investigated. Hydrogen peroxide destruction rates using UV light and the electrochemical reactor were too slow to be useful in a practical treatment scheme. Both activated carbon and pyrolusite catalysts produced fast rates of H2O2 destruction. However, the presence of EDTA and ED decreased reaction rates on activated carbon, whereas rates on pyrolusite were unaffected. Column experiments with the pyrolusite yielded greater than 99.9% H2 O2 destruction using empty bed contact times as short as 1 min.

Original languageEnglish (US)
Pages (from-to)623-629
Number of pages7
JournalIEEE Transactions on Semiconductor Manufacturing
Volume25
Issue number4
DOIs
StatePublished - Nov 2012

Keywords

  • Chemical mechanical planarization (CMP)
  • hydrogen peroxide
  • pyrolusite
  • wastewater treatment

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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