Hydrogenation of Si from SiN x:H films: How much hydrogen is really in the Si?

Michael Stavola, Fan Jiang, A. Rohatgi, D. Kim, J. Holt, H. Atwater, J. Kalejs

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

A promising method to introduce H into Si solar cells in order to passivate bulk defects is by the post-deposition annealing of an H-rich, SiN x surface layer. It previously has been difficult to characterize the small concentration of H that is introduced by this method. IR spectroscopy has been used together with marker impurities in the Si to determine the concentration and depth of H introduced into Si from an annealed SiN x film.

Original languageEnglish (US)
Title of host publicationProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
EditorsK. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
Pages909-912
Number of pages4
StatePublished - Dec 1 2003
Externally publishedYes
EventProceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan
Duration: May 11 2003May 18 2003

Publication series

NameProceedings of the 3rd World Conference on Photovoltaic Energy Conversion
VolumeA

Conference

ConferenceProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Country/TerritoryJapan
CityOsaka
Period5/11/035/18/03

ASJC Scopus subject areas

  • Engineering(all)

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