Hydrogenation of Si from SiN x:H films: How much hydrogen is really in the Si?

Michael Stavola, Fan Jiang, A. Rohatgi, D. Kim, J. Holt, H. Atwater, J. Kalejs

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

A promising method to introduce H into Si solar cells in order to passivate bulk defects is by the post-deposition annealing of an H-rich, SiN x surface layer. It previously has been difficult to characterize the small concentration of H that is introduced by this method. IR spectroscopy has been used together with marker impurities in the Si to determine the concentration and depth of H introduced into Si from an annealed SiN x film.

Original languageEnglish (US)
Title of host publicationProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
EditorsK. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
Pages909-912
Number of pages4
StatePublished - Dec 1 2003
Externally publishedYes
EventProceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan
Duration: May 11 2003May 18 2003

Publication series

NameProceedings of the 3rd World Conference on Photovoltaic Energy Conversion
VolumeA

Conference

ConferenceProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
CountryJapan
CityOsaka
Period5/11/035/18/03

ASJC Scopus subject areas

  • Engineering(all)

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    Stavola, M., Jiang, F., Rohatgi, A., Kim, D., Holt, J., Atwater, H., & Kalejs, J. (2003). Hydrogenation of Si from SiN x:H films: How much hydrogen is really in the Si? In K. Kurokawa, L. L. Kazmerski, B. McNeils, M. Yamaguchi, & C. Wronski (Eds.), Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion (pp. 909-912). (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion; Vol. A).