A method to introduce H into multicrystalline Si solar cells in order to passivate bulk defects was presented. The infrared spectroscopy was used together with marker impurities in the Si to determine the concentration and depth of H introduced into Si from an annealed SiNx film. It was reported that the H could be introduced by the postdeposition annealing of a H-rich, SiNx surface layers.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)