Hydrogenation of Si from SiNx(H) films: Characterization of H introduced into the Si

Fan Jiang, Michael Stavola, A. Rohatgi, D. Kim, J. Holt, H. Atwater, J. Kalejs

Research output: Contribution to journalArticlepeer-review

61 Scopus citations


A method to introduce H into multicrystalline Si solar cells in order to passivate bulk defects was presented. The infrared spectroscopy was used together with marker impurities in the Si to determine the concentration and depth of H introduced into Si from an annealed SiNx film. It was reported that the H could be introduced by the postdeposition annealing of a H-rich, SiNx surface layers.

Original languageEnglish (US)
Pages (from-to)931-933
Number of pages3
JournalApplied Physics Letters
Issue number5
StatePublished - Aug 4 2003
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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