Hydrogenation of Si from SiNx(H) films: Characterization of H introduced into the Si

Fan Jiang, Michael Stavola, A. Rohatgi, D. Kim, J. Holt, H. Atwater, J. Kalejs

Research output: Contribution to journalArticle

60 Scopus citations

Abstract

A method to introduce H into multicrystalline Si solar cells in order to passivate bulk defects was presented. The infrared spectroscopy was used together with marker impurities in the Si to determine the concentration and depth of H introduced into Si from an annealed SiNx film. It was reported that the H could be introduced by the postdeposition annealing of a H-rich, SiNx surface layers.

Original languageEnglish (US)
Pages (from-to)931-933
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number5
DOIs
StatePublished - Aug 4 2003
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Jiang, F., Stavola, M., Rohatgi, A., Kim, D., Holt, J., Atwater, H., & Kalejs, J. (2003). Hydrogenation of Si from SiNx(H) films: Characterization of H introduced into the Si. Applied Physics Letters, 83(5), 931-933. https://doi.org/10.1063/1.1598643