Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices

Shahab Siddiqui, Min Dai, Rainer Loesing, Erdem Kaltalioglu, Rajan Pandey, Rajesh Sathiyanarayanan, Sandip De, Srini Raghavan, Harold Parks

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this study, the authors investigate the impact of radical oxygen plasma on nitrided and annealed atomic layer deposited (ALD) SiO2 as a thick gate oxide (1.65-3 V) with a high-k/metal gate transistor. Time-dependent-dielectric-breakdown voltage, secondary ion mass spectroscopy (SIMS), and x-ray photoelectron spectroscopy (XPS) studies were conducted, and the results are discussed for nitrided and annealed ALD SiO2 with and without radical oxygen plasma exposure. Atomistic material simulations were performed to understand the reactions between oxygen radicals and silicon oxynitride (SiON). Our key findings from SIMS and XPS show that radical oxygen plasma exposure led to a 34% nitrogen loss from the thick SiON gate oxide and damaged the gate oxide, resulting in a 1 V reduction in the dielectric breakdown voltage. Atomistic material simulation results also show that atomic oxygen can react with Si-(ON)-Si to form Si-O-Si bonds and mobilize NO into the interstitial space. Similarly, when O atoms and O2 molecules are placed near N clusters, spontaneous diffusion of N2 into the interstitial space occurs. Diffusion barrier calculations further indicate a barrier energy of less than 0.5 eV in SiO2 and SiON, which can lead to the out-diffusion of NO and N2 from SiO2 and SiON. These compositional changes may result in increased leakage and a degraded breakdown voltage. The increased gate leakage and degraded breakdown voltage is attributed to the compositional changes in SiON.

Original languageEnglish (US)
Article number012202
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume35
Issue number1
DOIs
StatePublished - Jan 1 2017

Fingerprint

oxynitrides
oxygen plasma
fins
Field effect transistors
Electric breakdown
Silicon
high voltages
electrical faults
field effect transistors
Metals
Oxygen
Plasmas
output
Reactive Oxygen Species
Electric potential
silicon
metals
Oxides
x ray spectroscopy
oxides

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices. / Siddiqui, Shahab; Dai, Min; Loesing, Rainer; Kaltalioglu, Erdem; Pandey, Rajan; Sathiyanarayanan, Rajesh; De, Sandip; Raghavan, Srini; Parks, Harold.

In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, Vol. 35, No. 1, 012202, 01.01.2017.

Research output: Contribution to journalArticle

@article{593cddbbfc8e405a81cf6954f3affdbb,
title = "Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices",
abstract = "In this study, the authors investigate the impact of radical oxygen plasma on nitrided and annealed atomic layer deposited (ALD) SiO2 as a thick gate oxide (1.65-3 V) with a high-k/metal gate transistor. Time-dependent-dielectric-breakdown voltage, secondary ion mass spectroscopy (SIMS), and x-ray photoelectron spectroscopy (XPS) studies were conducted, and the results are discussed for nitrided and annealed ALD SiO2 with and without radical oxygen plasma exposure. Atomistic material simulations were performed to understand the reactions between oxygen radicals and silicon oxynitride (SiON). Our key findings from SIMS and XPS show that radical oxygen plasma exposure led to a 34{\%} nitrogen loss from the thick SiON gate oxide and damaged the gate oxide, resulting in a 1 V reduction in the dielectric breakdown voltage. Atomistic material simulation results also show that atomic oxygen can react with Si-(ON)-Si to form Si-O-Si bonds and mobilize NO into the interstitial space. Similarly, when O atoms and O2 molecules are placed near N clusters, spontaneous diffusion of N2 into the interstitial space occurs. Diffusion barrier calculations further indicate a barrier energy of less than 0.5 eV in SiO2 and SiON, which can lead to the out-diffusion of NO and N2 from SiO2 and SiON. These compositional changes may result in increased leakage and a degraded breakdown voltage. The increased gate leakage and degraded breakdown voltage is attributed to the compositional changes in SiON.",
author = "Shahab Siddiqui and Min Dai and Rainer Loesing and Erdem Kaltalioglu and Rajan Pandey and Rajesh Sathiyanarayanan and Sandip De and Srini Raghavan and Harold Parks",
year = "2017",
month = "1",
day = "1",
doi = "10.1116/1.4974250",
language = "English (US)",
volume = "35",
journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",
issn = "2166-2746",
publisher = "AVS Science and Technology Society",
number = "1",

}

TY - JOUR

T1 - Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices

AU - Siddiqui, Shahab

AU - Dai, Min

AU - Loesing, Rainer

AU - Kaltalioglu, Erdem

AU - Pandey, Rajan

AU - Sathiyanarayanan, Rajesh

AU - De, Sandip

AU - Raghavan, Srini

AU - Parks, Harold

PY - 2017/1/1

Y1 - 2017/1/1

N2 - In this study, the authors investigate the impact of radical oxygen plasma on nitrided and annealed atomic layer deposited (ALD) SiO2 as a thick gate oxide (1.65-3 V) with a high-k/metal gate transistor. Time-dependent-dielectric-breakdown voltage, secondary ion mass spectroscopy (SIMS), and x-ray photoelectron spectroscopy (XPS) studies were conducted, and the results are discussed for nitrided and annealed ALD SiO2 with and without radical oxygen plasma exposure. Atomistic material simulations were performed to understand the reactions between oxygen radicals and silicon oxynitride (SiON). Our key findings from SIMS and XPS show that radical oxygen plasma exposure led to a 34% nitrogen loss from the thick SiON gate oxide and damaged the gate oxide, resulting in a 1 V reduction in the dielectric breakdown voltage. Atomistic material simulation results also show that atomic oxygen can react with Si-(ON)-Si to form Si-O-Si bonds and mobilize NO into the interstitial space. Similarly, when O atoms and O2 molecules are placed near N clusters, spontaneous diffusion of N2 into the interstitial space occurs. Diffusion barrier calculations further indicate a barrier energy of less than 0.5 eV in SiO2 and SiON, which can lead to the out-diffusion of NO and N2 from SiO2 and SiON. These compositional changes may result in increased leakage and a degraded breakdown voltage. The increased gate leakage and degraded breakdown voltage is attributed to the compositional changes in SiON.

AB - In this study, the authors investigate the impact of radical oxygen plasma on nitrided and annealed atomic layer deposited (ALD) SiO2 as a thick gate oxide (1.65-3 V) with a high-k/metal gate transistor. Time-dependent-dielectric-breakdown voltage, secondary ion mass spectroscopy (SIMS), and x-ray photoelectron spectroscopy (XPS) studies were conducted, and the results are discussed for nitrided and annealed ALD SiO2 with and without radical oxygen plasma exposure. Atomistic material simulations were performed to understand the reactions between oxygen radicals and silicon oxynitride (SiON). Our key findings from SIMS and XPS show that radical oxygen plasma exposure led to a 34% nitrogen loss from the thick SiON gate oxide and damaged the gate oxide, resulting in a 1 V reduction in the dielectric breakdown voltage. Atomistic material simulation results also show that atomic oxygen can react with Si-(ON)-Si to form Si-O-Si bonds and mobilize NO into the interstitial space. Similarly, when O atoms and O2 molecules are placed near N clusters, spontaneous diffusion of N2 into the interstitial space occurs. Diffusion barrier calculations further indicate a barrier energy of less than 0.5 eV in SiO2 and SiON, which can lead to the out-diffusion of NO and N2 from SiO2 and SiON. These compositional changes may result in increased leakage and a degraded breakdown voltage. The increased gate leakage and degraded breakdown voltage is attributed to the compositional changes in SiON.

UR - http://www.scopus.com/inward/record.url?scp=85009882004&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85009882004&partnerID=8YFLogxK

U2 - 10.1116/1.4974250

DO - 10.1116/1.4974250

M3 - Article

AN - SCOPUS:85009882004

VL - 35

JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

SN - 2166-2746

IS - 1

M1 - 012202

ER -