Importance of intramolecular electron spin relaxation in small molecule semiconductors

L. Schulz, M. Willis, L. Nuccio, P. Shusharov, S. Fratini, F. L. Pratt, W. P. Gillin, T. Kreouzis, M. Heeney, N. Stingelin, Charles A Stafford, D. J. Beesley, C. Bernhard, J. E. Anthony, I. McKenzie, J. S. Lord, A. J. Drew

Research output: Contribution to journalArticle

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Abstract

Electron spin relaxation rate (eSR) is investigated on several organic semiconductors of different morphologies and molecular structures, using avoided level crossing muon spectroscopy as a local spin probe. We find that two functionalized acenes (polycrystalline tri(isopropyl)silyl-pentacene and amorphous 5,6,11,12-tetraphenyltetracene) exhibit eSRs with an Arrhenius-like temperature dependence, each with two characteristic energy scales similar to those expected from vibrations. Polycrystalline tris(8-hydroxyquinolate)gallium shows a similar behavior. The observed eSR for these molecules is no greater than 0.85 MHz at 300 K. The variety of crystal structures and transport regimes that these molecules possess, as well as the local nature of the probe, strongly suggest an intramolecular phenomenon general to many organic semiconductors, in contrast to the commonly assumed spin relaxation models based on intermolecular charge-carrier transport.

Original languageEnglish (US)
Article number085209
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume84
Issue number8
DOIs
StatePublished - Aug 26 2011

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Semiconducting organic compounds
electron spin
organic semiconductors
Semiconductor materials
Gallium
Molecules
Carrier transport
Electrons
Charge carriers
Molecular structure
molecules
probes
Crystal structure
Spectroscopy
gallium
charge carriers
muons
molecular structure
vibration
temperature dependence

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Importance of intramolecular electron spin relaxation in small molecule semiconductors. / Schulz, L.; Willis, M.; Nuccio, L.; Shusharov, P.; Fratini, S.; Pratt, F. L.; Gillin, W. P.; Kreouzis, T.; Heeney, M.; Stingelin, N.; Stafford, Charles A; Beesley, D. J.; Bernhard, C.; Anthony, J. E.; McKenzie, I.; Lord, J. S.; Drew, A. J.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 84, No. 8, 085209, 26.08.2011.

Research output: Contribution to journalArticle

Schulz, L, Willis, M, Nuccio, L, Shusharov, P, Fratini, S, Pratt, FL, Gillin, WP, Kreouzis, T, Heeney, M, Stingelin, N, Stafford, CA, Beesley, DJ, Bernhard, C, Anthony, JE, McKenzie, I, Lord, JS & Drew, AJ 2011, 'Importance of intramolecular electron spin relaxation in small molecule semiconductors', Physical Review B - Condensed Matter and Materials Physics, vol. 84, no. 8, 085209. https://doi.org/10.1103/PhysRevB.84.085209
Schulz, L. ; Willis, M. ; Nuccio, L. ; Shusharov, P. ; Fratini, S. ; Pratt, F. L. ; Gillin, W. P. ; Kreouzis, T. ; Heeney, M. ; Stingelin, N. ; Stafford, Charles A ; Beesley, D. J. ; Bernhard, C. ; Anthony, J. E. ; McKenzie, I. ; Lord, J. S. ; Drew, A. J. / Importance of intramolecular electron spin relaxation in small molecule semiconductors. In: Physical Review B - Condensed Matter and Materials Physics. 2011 ; Vol. 84, No. 8.
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