InAs quantum dot site-selective growth on GaAs substrates

Joshua Hendrickson, Mathieu Helfrich, Michael Gehl, Dongzhi Hu, Daniel Schaadt, Stefan Linden, Martin Wegener, Benjamin Richards, Hyatt Gibbs, Galina Khitrova

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Photoluminescence (PL) spectra and AFM measurements of InAs quantum dots grown in a site-selective manner on pre-patterned GaAs substrates are presented. A number of processing steps are described including a Ga-assisted deoxidation step to remove native oxides from the sample surface. Furthermore, post growth annealing is shown to be a promising technique for improving the quantum dot density and likelihood of single site-selective nucleation. Morphological transitions are shown to occur during the annealing process with two initial quantum dots in a given nucleation site transforming into one slightly larger quantum dot. Density measurements performed by AFM combined with PL spectroscopic measurements show that we have achieved optically active, site-selective dot growth, and additionally allow us to calculate that our site-selective dots are on average 30% as efficient as unpatterned dots.

Original languageEnglish (US)
Pages (from-to)1242-1245
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume8
Issue number4
DOIs
StatePublished - Apr 2011

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quantum dots
atomic force microscopy
nucleation
photoluminescence
annealing
oxides

Keywords

  • Annealing
  • Deterministic growth
  • MBE
  • Quantum dot

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

InAs quantum dot site-selective growth on GaAs substrates. / Hendrickson, Joshua; Helfrich, Mathieu; Gehl, Michael; Hu, Dongzhi; Schaadt, Daniel; Linden, Stefan; Wegener, Martin; Richards, Benjamin; Gibbs, Hyatt; Khitrova, Galina.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 8, No. 4, 04.2011, p. 1242-1245.

Research output: Contribution to journalArticle

Hendrickson, J, Helfrich, M, Gehl, M, Hu, D, Schaadt, D, Linden, S, Wegener, M, Richards, B, Gibbs, H & Khitrova, G 2011, 'InAs quantum dot site-selective growth on GaAs substrates', Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 8, no. 4, pp. 1242-1245. https://doi.org/10.1002/pssc.201000850
Hendrickson, Joshua ; Helfrich, Mathieu ; Gehl, Michael ; Hu, Dongzhi ; Schaadt, Daniel ; Linden, Stefan ; Wegener, Martin ; Richards, Benjamin ; Gibbs, Hyatt ; Khitrova, Galina. / InAs quantum dot site-selective growth on GaAs substrates. In: Physica Status Solidi (C) Current Topics in Solid State Physics. 2011 ; Vol. 8, No. 4. pp. 1242-1245.
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