InAs quantum dot site-selective growth on GaAs substrates

Joshua Hendrickson, Mathieu Helfrich, Michael Gehl, Dongzhi Hu, Daniel Schaadt, Stefan Linden, Martin Wegener, Benjamin Richards, Hyatt Gibbs, Galina Khitrova

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

Photoluminescence (PL) spectra and AFM measurements of InAs quantum dots grown in a site-selective manner on pre-patterned GaAs substrates are presented. A number of processing steps are described including a Ga-assisted deoxidation step to remove native oxides from the sample surface. Furthermore, post growth annealing is shown to be a promising technique for improving the quantum dot density and likelihood of single site-selective nucleation. Morphological transitions are shown to occur during the annealing process with two initial quantum dots in a given nucleation site transforming into one slightly larger quantum dot. Density measurements performed by AFM combined with PL spectroscopic measurements show that we have achieved optically active, site-selective dot growth, and additionally allow us to calculate that our site-selective dots are on average 30% as efficient as unpatterned dots.

Original languageEnglish (US)
Pages (from-to)1242-1245
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume8
Issue number4
DOIs
StatePublished - Apr 1 2011

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Keywords

  • Annealing
  • Deterministic growth
  • MBE
  • Quantum dot

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Hendrickson, J., Helfrich, M., Gehl, M., Hu, D., Schaadt, D., Linden, S., Wegener, M., Richards, B., Gibbs, H., & Khitrova, G. (2011). InAs quantum dot site-selective growth on GaAs substrates. Physica Status Solidi (C) Current Topics in Solid State Physics, 8(4), 1242-1245. https://doi.org/10.1002/pssc.201000850