Influence of carrier-correlations on the optical Stark effect of semiconductors

T. Meier, C. Sieh, Stephan W Koch, P. Brick, M. Huebner, C. Ell, J. Prineas, Galina Khitrova, H. M. Gibbs

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

The signatures of carrier correlations are investigated using a microscopic model which fully includes four particle (two electrons-two holes) correlations within the coherent χ(3) limit. In this one-dimensional tight binding model, two spin-degenerate electron and heavy-hole bands are considered and the usual circularly-polarized dipole matrix elements describing the optical transitions between these bands are used. The optical response within this model is computed in the coherent χ(3) limit without further approximation. Solutions of the relevant equations of motion for a one-dimensional tight binding model are obtained without any assumptions about the nature of bound and unbound two-exciton states.

Original languageEnglish (US)
Title of host publicationIQEC, International Quantum Electronics Conference Proceedings
PublisherIEEE
Pages14-15
Number of pages2
Publication statusPublished - 1999
Externally publishedYes
EventProceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99) - Baltimore, MD, USA
Duration: May 23 1999May 28 1999

Other

OtherProceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99)
CityBaltimore, MD, USA
Period5/23/995/28/99

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Meier, T., Sieh, C., Koch, S. W., Brick, P., Huebner, M., Ell, C., ... Gibbs, H. M. (1999). Influence of carrier-correlations on the optical Stark effect of semiconductors. In IQEC, International Quantum Electronics Conference Proceedings (pp. 14-15). IEEE.