Influence of Coulomb interaction on the photon echo in disordered semiconductors

D. Bennhardt, P. Thomas, A. Weller, M. Lindberg, S. W. Koch

Research output: Contribution to journalArticlepeer-review

32 Scopus citations


The photon-echo signal in disordered semiconductors is treated including the electron-hole Coulomb attraction. The amplitude of the spontaneous photon echo is calculated up to third order in the external-field amplitude using the semiconductor Bloch equations. Several idealized situations are analyzed showing the significance of a critical correlation of the polarization dynamics in the two time intervals preceding and following the second excitation pulse. Strong photon-echo decay is predicted for short-range disorder without Coulomb interaction. The inclusion of electron-hole attraction leads to a stabilization of the echo signal. For the case of long-range disorder with Coulomb interaction, we predict slow decay in the diffusive limit.

Original languageEnglish (US)
Pages (from-to)8934-8945
Number of pages12
JournalPhysical Review B
Issue number11
StatePublished - 1991

ASJC Scopus subject areas

  • Condensed Matter Physics


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