Influence of growth conditions on the optical gain of 1.3 μm (GaIn)(NAs)/GaAs lasers

N. Gerhardt, M. Hofmann, K. Handtke, W. Stolz, Stephan W Koch, Jorg Hader, Jerome V Moloney, A. Yu Egorov, H. Riechert

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The optical gain of (GaIn)(NAs)/GaAs laser structures were investigated. It was demonstrated that the gain critically depended on the growth conditions. The results showed that the relaxation between the different transitions were weak and this confirmed the model of spatially separated transitions.

Original languageEnglish (US)
Title of host publicationConference Digest - IEEE International Semiconductor Laser Conference
Pages85-86
Number of pages2
StatePublished - 2002
Event2002 IEEE 18th International Semiconductor Laser Conference: Conference Digest - Garmish, Germany
Duration: Sep 29 2002Oct 3 2002

Other

Other2002 IEEE 18th International Semiconductor Laser Conference: Conference Digest
CountryGermany
CityGarmish
Period9/29/0210/3/02

Fingerprint

Optical gain
Lasers
lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Gerhardt, N., Hofmann, M., Handtke, K., Stolz, W., Koch, S. W., Hader, J., ... Riechert, H. (2002). Influence of growth conditions on the optical gain of 1.3 μm (GaIn)(NAs)/GaAs lasers. In Conference Digest - IEEE International Semiconductor Laser Conference (pp. 85-86)

Influence of growth conditions on the optical gain of 1.3 μm (GaIn)(NAs)/GaAs lasers. / Gerhardt, N.; Hofmann, M.; Handtke, K.; Stolz, W.; Koch, Stephan W; Hader, Jorg; Moloney, Jerome V; Egorov, A. Yu; Riechert, H.

Conference Digest - IEEE International Semiconductor Laser Conference. 2002. p. 85-86.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gerhardt, N, Hofmann, M, Handtke, K, Stolz, W, Koch, SW, Hader, J, Moloney, JV, Egorov, AY & Riechert, H 2002, Influence of growth conditions on the optical gain of 1.3 μm (GaIn)(NAs)/GaAs lasers. in Conference Digest - IEEE International Semiconductor Laser Conference. pp. 85-86, 2002 IEEE 18th International Semiconductor Laser Conference: Conference Digest, Garmish, Germany, 9/29/02.
Gerhardt N, Hofmann M, Handtke K, Stolz W, Koch SW, Hader J et al. Influence of growth conditions on the optical gain of 1.3 μm (GaIn)(NAs)/GaAs lasers. In Conference Digest - IEEE International Semiconductor Laser Conference. 2002. p. 85-86
Gerhardt, N. ; Hofmann, M. ; Handtke, K. ; Stolz, W. ; Koch, Stephan W ; Hader, Jorg ; Moloney, Jerome V ; Egorov, A. Yu ; Riechert, H. / Influence of growth conditions on the optical gain of 1.3 μm (GaIn)(NAs)/GaAs lasers. Conference Digest - IEEE International Semiconductor Laser Conference. 2002. pp. 85-86
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