Influence of growth conditions on the optical gain of 1.3 μm (GaIn)(NAs)/GaAs lasers

N. Gerhardt, M. Hofmann, K. Handtke, W. Stolz, S. W. Koch, J. Hader, J. V. Moloney, A. Yu Egorov, H. Riechert

Research output: Contribution to journalConference articlepeer-review

Abstract

The optical gain of (GaIn)(NAs)/GaAs laser structures were investigated. It was demonstrated that the gain critically depended on the growth conditions. The results showed that the relaxation between the different transitions were weak and this confirmed the model of spatially separated transitions.

Original languageEnglish (US)
Pages (from-to)85-86
Number of pages2
JournalConference Digest - IEEE International Semiconductor Laser Conference
StatePublished - Jan 1 2002
Event2002 IEEE 18th International Semiconductor Laser Conference: Conference Digest - Garmish, Germany
Duration: Sep 29 2002Oct 3 2002

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Influence of growth conditions on the optical gain of 1.3 μm (GaIn)(NAs)/GaAs lasers'. Together they form a unique fingerprint.

Cite this