Influence of internal fields on gain and spontaneous emission in InGaN quantum wells

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Abstract

Fully microscopic models are used to investigate the structural dependence of InGaNGaN quantum-well semiconductor-laser gain media. Due to the inherent piezoelectric fields, the amplitudes and spectral positions of gain and spontaneous emission strongly depend on the structural details. It is shown how quantitative experiment/theory comparisons can be used to determine the fields. As a general trend, it is found that the loss current due to spontaneous emission at threshold decreases with well width and indium composition.

Original languageEnglish (US)
Article number171120
JournalApplied Physics Letters
Volume89
Issue number17
DOIs
StatePublished - Nov 6 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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