Abstract
Microscopic many-body theory is employed to analyze the mode-locking dynamics of a vertical external-cavity surface-emitting laser with a saturable absorber mirror. The quantum-wells are treated microscopically through the semiconductor Bloch equations and the light field using Maxwell's equations. Higher order correlation effects such as polarization dephasing and carrier relaxation at the second Born level are included and also approximated using effective rates fitted to second-Born-Markov evaluations. The theory is evaluated numerically for vertical external cavity surface emitting lasers with resonant periodic gain media. For given gain, the influence of the loss conditions on the very-short pulse generation in the range above 100 fs is analyzed. Optimized operational parameters are identified. Additionally, the fully microscopic theory at the second Born level is used to carrier out a pump-probe study of the carrier recovery in individual critical components of the VECSEL cavity such as the VECSEL chip itself and semiconductor or graphene saturable absorber mirrors.
| Original language | English (US) |
|---|---|
| Title of host publication | Vertical External Cavity Surface Emitting Lasers (VECSELs) VI |
| Publisher | SPIE |
| Volume | 9734 |
| ISBN (Electronic) | 9781628419696 |
| DOIs | |
| State | Published - 2016 |
| Event | Vertical External Cavity Surface Emitting Lasers (VECSELs) VI - San Francisco, United States Duration: Feb 15 2016 → Feb 16 2016 |
Other
| Other | Vertical External Cavity Surface Emitting Lasers (VECSELs) VI |
|---|---|
| Country | United States |
| City | San Francisco |
| Period | 2/15/16 → 2/16/16 |
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Keywords
- 2ndBorn
- mode-locking
- RPG
- semiconductor Bloch equations
- semiconductor laser
- SESAM
- simulation
- VECSELs
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Electrical and Electronic Engineering
- Applied Mathematics
Cite this
Influence of kinetic hole filling on the stability of mode-locked semiconductor disk lasers. / Moloney, Jerome V; Kilen, Isak; Hader, Jorg; Koch, Stephan W.
Vertical External Cavity Surface Emitting Lasers (VECSELs) VI. Vol. 9734 SPIE, 2016. 97340U.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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TY - GEN
T1 - Influence of kinetic hole filling on the stability of mode-locked semiconductor disk lasers
AU - Moloney, Jerome V
AU - Kilen, Isak
AU - Hader, Jorg
AU - Koch, Stephan W
PY - 2016
Y1 - 2016
N2 - Microscopic many-body theory is employed to analyze the mode-locking dynamics of a vertical external-cavity surface-emitting laser with a saturable absorber mirror. The quantum-wells are treated microscopically through the semiconductor Bloch equations and the light field using Maxwell's equations. Higher order correlation effects such as polarization dephasing and carrier relaxation at the second Born level are included and also approximated using effective rates fitted to second-Born-Markov evaluations. The theory is evaluated numerically for vertical external cavity surface emitting lasers with resonant periodic gain media. For given gain, the influence of the loss conditions on the very-short pulse generation in the range above 100 fs is analyzed. Optimized operational parameters are identified. Additionally, the fully microscopic theory at the second Born level is used to carrier out a pump-probe study of the carrier recovery in individual critical components of the VECSEL cavity such as the VECSEL chip itself and semiconductor or graphene saturable absorber mirrors.
AB - Microscopic many-body theory is employed to analyze the mode-locking dynamics of a vertical external-cavity surface-emitting laser with a saturable absorber mirror. The quantum-wells are treated microscopically through the semiconductor Bloch equations and the light field using Maxwell's equations. Higher order correlation effects such as polarization dephasing and carrier relaxation at the second Born level are included and also approximated using effective rates fitted to second-Born-Markov evaluations. The theory is evaluated numerically for vertical external cavity surface emitting lasers with resonant periodic gain media. For given gain, the influence of the loss conditions on the very-short pulse generation in the range above 100 fs is analyzed. Optimized operational parameters are identified. Additionally, the fully microscopic theory at the second Born level is used to carrier out a pump-probe study of the carrier recovery in individual critical components of the VECSEL cavity such as the VECSEL chip itself and semiconductor or graphene saturable absorber mirrors.
KW - 2ndBorn
KW - mode-locking
KW - RPG
KW - semiconductor Bloch equations
KW - semiconductor laser
KW - SESAM
KW - simulation
KW - VECSELs
UR - http://www.scopus.com/inward/record.url?scp=84981164569&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84981164569&partnerID=8YFLogxK
U2 - 10.1117/12.2213600
DO - 10.1117/12.2213600
M3 - Conference contribution
AN - SCOPUS:84981164569
VL - 9734
BT - Vertical External Cavity Surface Emitting Lasers (VECSELs) VI
PB - SPIE
ER -