Influence of kinetic hole filling on the stability of mode-locked semiconductor disk lasers

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Microscopic many-body theory is employed to analyze the mode-locking dynamics of a vertical external-cavity surface-emitting laser with a saturable absorber mirror. The quantum-wells are treated microscopically through the semiconductor Bloch equations and the light field using Maxwell's equations. Higher order correlation effects such as polarization dephasing and carrier relaxation at the second Born level are included and also approximated using effective rates fitted to second-Born-Markov evaluations. The theory is evaluated numerically for vertical external cavity surface emitting lasers with resonant periodic gain media. For given gain, the influence of the loss conditions on the very-short pulse generation in the range above 100 fs is analyzed. Optimized operational parameters are identified. Additionally, the fully microscopic theory at the second Born level is used to carrier out a pump-probe study of the carrier recovery in individual critical components of the VECSEL cavity such as the VECSEL chip itself and semiconductor or graphene saturable absorber mirrors.

Original languageEnglish (US)
Title of host publicationVertical External Cavity Surface Emitting Lasers (VECSELs) VI
PublisherSPIE
Volume9734
ISBN (Electronic)9781628419696
DOIs
StatePublished - 2016
EventVertical External Cavity Surface Emitting Lasers (VECSELs) VI - San Francisco, United States
Duration: Feb 15 2016Feb 16 2016

Other

OtherVertical External Cavity Surface Emitting Lasers (VECSELs) VI
CountryUnited States
CitySan Francisco
Period2/15/162/16/16

Fingerprint

Saturable absorbers
Videodisks
Surface emitting lasers
Saturable Absorber
Semiconductors
External Cavity
Kinetics
Semiconductor materials
Laser
surface emitting lasers
Laser mode locking
cavities
Graphite
absorbers
Mirror
kinetics
Maxwell equations
Vertical
Graphene
Semiconductor quantum wells

Keywords

  • 2ndBorn
  • mode-locking
  • RPG
  • semiconductor Bloch equations
  • semiconductor laser
  • SESAM
  • simulation
  • VECSELs

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Applied Mathematics

Cite this

Moloney, J. V., Kilen, I., Hader, J., & Koch, S. W. (2016). Influence of kinetic hole filling on the stability of mode-locked semiconductor disk lasers. In Vertical External Cavity Surface Emitting Lasers (VECSELs) VI (Vol. 9734). [97340U] SPIE. https://doi.org/10.1117/12.2213600

Influence of kinetic hole filling on the stability of mode-locked semiconductor disk lasers. / Moloney, Jerome V; Kilen, Isak; Hader, Jorg; Koch, Stephan W.

Vertical External Cavity Surface Emitting Lasers (VECSELs) VI. Vol. 9734 SPIE, 2016. 97340U.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Moloney, JV, Kilen, I, Hader, J & Koch, SW 2016, Influence of kinetic hole filling on the stability of mode-locked semiconductor disk lasers. in Vertical External Cavity Surface Emitting Lasers (VECSELs) VI. vol. 9734, 97340U, SPIE, Vertical External Cavity Surface Emitting Lasers (VECSELs) VI, San Francisco, United States, 2/15/16. https://doi.org/10.1117/12.2213600
Moloney JV, Kilen I, Hader J, Koch SW. Influence of kinetic hole filling on the stability of mode-locked semiconductor disk lasers. In Vertical External Cavity Surface Emitting Lasers (VECSELs) VI. Vol. 9734. SPIE. 2016. 97340U https://doi.org/10.1117/12.2213600
Moloney, Jerome V ; Kilen, Isak ; Hader, Jorg ; Koch, Stephan W. / Influence of kinetic hole filling on the stability of mode-locked semiconductor disk lasers. Vertical External Cavity Surface Emitting Lasers (VECSELs) VI. Vol. 9734 SPIE, 2016.
@inproceedings{e59823464c1d4451a3debf246fafdf4f,
title = "Influence of kinetic hole filling on the stability of mode-locked semiconductor disk lasers",
abstract = "Microscopic many-body theory is employed to analyze the mode-locking dynamics of a vertical external-cavity surface-emitting laser with a saturable absorber mirror. The quantum-wells are treated microscopically through the semiconductor Bloch equations and the light field using Maxwell's equations. Higher order correlation effects such as polarization dephasing and carrier relaxation at the second Born level are included and also approximated using effective rates fitted to second-Born-Markov evaluations. The theory is evaluated numerically for vertical external cavity surface emitting lasers with resonant periodic gain media. For given gain, the influence of the loss conditions on the very-short pulse generation in the range above 100 fs is analyzed. Optimized operational parameters are identified. Additionally, the fully microscopic theory at the second Born level is used to carrier out a pump-probe study of the carrier recovery in individual critical components of the VECSEL cavity such as the VECSEL chip itself and semiconductor or graphene saturable absorber mirrors.",
keywords = "2ndBorn, mode-locking, RPG, semiconductor Bloch equations, semiconductor laser, SESAM, simulation, VECSELs",
author = "Moloney, {Jerome V} and Isak Kilen and Jorg Hader and Koch, {Stephan W}",
year = "2016",
doi = "10.1117/12.2213600",
language = "English (US)",
volume = "9734",
booktitle = "Vertical External Cavity Surface Emitting Lasers (VECSELs) VI",
publisher = "SPIE",
address = "United States",

}

TY - GEN

T1 - Influence of kinetic hole filling on the stability of mode-locked semiconductor disk lasers

AU - Moloney, Jerome V

AU - Kilen, Isak

AU - Hader, Jorg

AU - Koch, Stephan W

PY - 2016

Y1 - 2016

N2 - Microscopic many-body theory is employed to analyze the mode-locking dynamics of a vertical external-cavity surface-emitting laser with a saturable absorber mirror. The quantum-wells are treated microscopically through the semiconductor Bloch equations and the light field using Maxwell's equations. Higher order correlation effects such as polarization dephasing and carrier relaxation at the second Born level are included and also approximated using effective rates fitted to second-Born-Markov evaluations. The theory is evaluated numerically for vertical external cavity surface emitting lasers with resonant periodic gain media. For given gain, the influence of the loss conditions on the very-short pulse generation in the range above 100 fs is analyzed. Optimized operational parameters are identified. Additionally, the fully microscopic theory at the second Born level is used to carrier out a pump-probe study of the carrier recovery in individual critical components of the VECSEL cavity such as the VECSEL chip itself and semiconductor or graphene saturable absorber mirrors.

AB - Microscopic many-body theory is employed to analyze the mode-locking dynamics of a vertical external-cavity surface-emitting laser with a saturable absorber mirror. The quantum-wells are treated microscopically through the semiconductor Bloch equations and the light field using Maxwell's equations. Higher order correlation effects such as polarization dephasing and carrier relaxation at the second Born level are included and also approximated using effective rates fitted to second-Born-Markov evaluations. The theory is evaluated numerically for vertical external cavity surface emitting lasers with resonant periodic gain media. For given gain, the influence of the loss conditions on the very-short pulse generation in the range above 100 fs is analyzed. Optimized operational parameters are identified. Additionally, the fully microscopic theory at the second Born level is used to carrier out a pump-probe study of the carrier recovery in individual critical components of the VECSEL cavity such as the VECSEL chip itself and semiconductor or graphene saturable absorber mirrors.

KW - 2ndBorn

KW - mode-locking

KW - RPG

KW - semiconductor Bloch equations

KW - semiconductor laser

KW - SESAM

KW - simulation

KW - VECSELs

UR - http://www.scopus.com/inward/record.url?scp=84981164569&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84981164569&partnerID=8YFLogxK

U2 - 10.1117/12.2213600

DO - 10.1117/12.2213600

M3 - Conference contribution

AN - SCOPUS:84981164569

VL - 9734

BT - Vertical External Cavity Surface Emitting Lasers (VECSELs) VI

PB - SPIE

ER -