Influence of non-radiative carrier losses on pulsed and continuous VECSEL performance

Alexandre Laurain, Jorg Hader, Yi Ying Lai, Tsuei Lian Wang, Mike Yarborough, Ganesh Balakrishnan, Thomas J. Rotter, Pankaj Ahirwar, Jerome V Moloney

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

We investigate experimentally and theoretically the influence of non-radiative carrier losses on the performance of VECSELs under pulsed and CW pumping conditions. These losses are detrimental to the VECSEL performance not only because they reduce the pump-power to output-power conversion efficiency and lead to increased thresholds, but also because they are strong sources of heat. This heating reduces the achievable output power and eventually leads to shut-off due to thermal roll-over. We investigate the two main sources of non-radiative losses, defect recombination and Auger losses in InGaAs-based VECSELs for the 1010nm-1040nm range as well as for InGaSb-based devices for operation around 2μm. While defect related losses are found to be rather insignificant in InGaAs-based devices, they can be severe enough to prevent CW operation for the InGaSb-based structures. Auger losses are shown to be very significant for both wavelengths regimes and it is discussed how structural modifications can suppress them. For pulsed operation record output powers are demonstrated and the influence of the pulse duration and shape is studied.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume8242
DOIs
StatePublished - 2012
EventVertical External Cavity Surface Emitting Lasers (VECSELs) II - San Francisco, CA, United States
Duration: Jan 23 2012Jan 24 2012

Other

OtherVertical External Cavity Surface Emitting Lasers (VECSELs) II
CountryUnited States
CitySan Francisco, CA
Period1/23/121/24/12

Fingerprint

InGaAs
output
Output
Defects
defects
Recombination
Conversion efficiency
Pump
Influence
Heating
pulse duration
pumping
Heat
Pumps
Wavelength
pumps
heat
heating
thresholds
wavelengths

Keywords

  • Auger
  • Carriers losses
  • Defect recombination
  • MIR
  • OPSL
  • Semiconductor
  • VECSEL

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Laurain, A., Hader, J., Lai, Y. Y., Wang, T. L., Yarborough, M., Balakrishnan, G., ... Moloney, J. V. (2012). Influence of non-radiative carrier losses on pulsed and continuous VECSEL performance. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 8242). [82420S] https://doi.org/10.1117/12.909412

Influence of non-radiative carrier losses on pulsed and continuous VECSEL performance. / Laurain, Alexandre; Hader, Jorg; Lai, Yi Ying; Wang, Tsuei Lian; Yarborough, Mike; Balakrishnan, Ganesh; Rotter, Thomas J.; Ahirwar, Pankaj; Moloney, Jerome V.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8242 2012. 82420S.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Laurain, A, Hader, J, Lai, YY, Wang, TL, Yarborough, M, Balakrishnan, G, Rotter, TJ, Ahirwar, P & Moloney, JV 2012, Influence of non-radiative carrier losses on pulsed and continuous VECSEL performance. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 8242, 82420S, Vertical External Cavity Surface Emitting Lasers (VECSELs) II, San Francisco, CA, United States, 1/23/12. https://doi.org/10.1117/12.909412
Laurain A, Hader J, Lai YY, Wang TL, Yarborough M, Balakrishnan G et al. Influence of non-radiative carrier losses on pulsed and continuous VECSEL performance. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8242. 2012. 82420S https://doi.org/10.1117/12.909412
Laurain, Alexandre ; Hader, Jorg ; Lai, Yi Ying ; Wang, Tsuei Lian ; Yarborough, Mike ; Balakrishnan, Ganesh ; Rotter, Thomas J. ; Ahirwar, Pankaj ; Moloney, Jerome V. / Influence of non-radiative carrier losses on pulsed and continuous VECSEL performance. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8242 2012.
@inproceedings{923b355d7bc74b33b938542e43d9bb47,
title = "Influence of non-radiative carrier losses on pulsed and continuous VECSEL performance",
abstract = "We investigate experimentally and theoretically the influence of non-radiative carrier losses on the performance of VECSELs under pulsed and CW pumping conditions. These losses are detrimental to the VECSEL performance not only because they reduce the pump-power to output-power conversion efficiency and lead to increased thresholds, but also because they are strong sources of heat. This heating reduces the achievable output power and eventually leads to shut-off due to thermal roll-over. We investigate the two main sources of non-radiative losses, defect recombination and Auger losses in InGaAs-based VECSELs for the 1010nm-1040nm range as well as for InGaSb-based devices for operation around 2μm. While defect related losses are found to be rather insignificant in InGaAs-based devices, they can be severe enough to prevent CW operation for the InGaSb-based structures. Auger losses are shown to be very significant for both wavelengths regimes and it is discussed how structural modifications can suppress them. For pulsed operation record output powers are demonstrated and the influence of the pulse duration and shape is studied.",
keywords = "Auger, Carriers losses, Defect recombination, MIR, OPSL, Semiconductor, VECSEL",
author = "Alexandre Laurain and Jorg Hader and Lai, {Yi Ying} and Wang, {Tsuei Lian} and Mike Yarborough and Ganesh Balakrishnan and Rotter, {Thomas J.} and Pankaj Ahirwar and Moloney, {Jerome V}",
year = "2012",
doi = "10.1117/12.909412",
language = "English (US)",
isbn = "9780819488855",
volume = "8242",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

TY - GEN

T1 - Influence of non-radiative carrier losses on pulsed and continuous VECSEL performance

AU - Laurain, Alexandre

AU - Hader, Jorg

AU - Lai, Yi Ying

AU - Wang, Tsuei Lian

AU - Yarborough, Mike

AU - Balakrishnan, Ganesh

AU - Rotter, Thomas J.

AU - Ahirwar, Pankaj

AU - Moloney, Jerome V

PY - 2012

Y1 - 2012

N2 - We investigate experimentally and theoretically the influence of non-radiative carrier losses on the performance of VECSELs under pulsed and CW pumping conditions. These losses are detrimental to the VECSEL performance not only because they reduce the pump-power to output-power conversion efficiency and lead to increased thresholds, but also because they are strong sources of heat. This heating reduces the achievable output power and eventually leads to shut-off due to thermal roll-over. We investigate the two main sources of non-radiative losses, defect recombination and Auger losses in InGaAs-based VECSELs for the 1010nm-1040nm range as well as for InGaSb-based devices for operation around 2μm. While defect related losses are found to be rather insignificant in InGaAs-based devices, they can be severe enough to prevent CW operation for the InGaSb-based structures. Auger losses are shown to be very significant for both wavelengths regimes and it is discussed how structural modifications can suppress them. For pulsed operation record output powers are demonstrated and the influence of the pulse duration and shape is studied.

AB - We investigate experimentally and theoretically the influence of non-radiative carrier losses on the performance of VECSELs under pulsed and CW pumping conditions. These losses are detrimental to the VECSEL performance not only because they reduce the pump-power to output-power conversion efficiency and lead to increased thresholds, but also because they are strong sources of heat. This heating reduces the achievable output power and eventually leads to shut-off due to thermal roll-over. We investigate the two main sources of non-radiative losses, defect recombination and Auger losses in InGaAs-based VECSELs for the 1010nm-1040nm range as well as for InGaSb-based devices for operation around 2μm. While defect related losses are found to be rather insignificant in InGaAs-based devices, they can be severe enough to prevent CW operation for the InGaSb-based structures. Auger losses are shown to be very significant for both wavelengths regimes and it is discussed how structural modifications can suppress them. For pulsed operation record output powers are demonstrated and the influence of the pulse duration and shape is studied.

KW - Auger

KW - Carriers losses

KW - Defect recombination

KW - MIR

KW - OPSL

KW - Semiconductor

KW - VECSEL

UR - http://www.scopus.com/inward/record.url?scp=84863374230&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863374230&partnerID=8YFLogxK

U2 - 10.1117/12.909412

DO - 10.1117/12.909412

M3 - Conference contribution

SN - 9780819488855

VL - 8242

BT - Proceedings of SPIE - The International Society for Optical Engineering

ER -