Influence of the crystal characterization of CsI thin film for X-ray image detectors

Shuang Liu, Xu Chen, Zhiyong Zhong, Charles M. Falco

Research output: Contribution to journalConference articlepeer-review


Powder CsI crystal has been deposited with vacuum thermal evaporation on three different kinds of substrates: Si, SiO2/Si and Pt/Si. We have analyzed and observed these CsI films with different depth and various preparation conditions by XRD measurement. Through analyzing, we find that in such process condition the crystal state of CsI film has a strong relationship with the crystal structure of substrate, and non-crystal substrate goes against crystallization. By contrasting standard XRD diagram of CsI(Tl), we discover that with the influence of the surface structure of substrate, CsI crystal film has a preferred orientation in (200) crystal face. We also notice that the preferred orientation of CsI film has a close relation with the depth of the film: the preferred orientation has been weakened as the depth of film turning from 707mu;m to 1007mu;m. copy; 2009 SPIE.

Original languageEnglish (US)
Article number72790J
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - Jun 8 2009
EventPhotonics and Optoelectronics Meetings (POEM) 2008: Optoelectronic Devices and Integration - Wuhan, China
Duration: Nov 24 2008Nov 27 2008


  • Crystal characterization
  • CsI thin film
  • Preferred orientation
  • X-ray image detectors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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