Influence of the crystal characterization of CsI thin film for X-ray image detectors

Shuang Liu; Xu Chen; Zhiyong Zhong; Charles M. Falco

doi:10.1117/12.821153

Influence of the crystal characterization of CsI thin film for X-ray image detectors

Shuang Liu, Xu Chen, Zhiyong Zhong, Charles M. Falco

Optical Sciences, College of

Research output: Contribution to journal › Conference article › peer-review

Abstract

Powder CsI crystal has been deposited with vacuum thermal evaporation on three different kinds of substrates: Si, SiO₂/Si and Pt/Si. We have analyzed and observed these CsI films with different depth and various preparation conditions by XRD measurement. Through analyzing, we find that in such process condition the crystal state of CsI film has a strong relationship with the crystal structure of substrate, and non-crystal substrate goes against crystallization. By contrasting standard XRD diagram of CsI(Tl), we discover that with the influence of the surface structure of substrate, CsI crystal film has a preferred orientation in (200) crystal face. We also notice that the preferred orientation of CsI film has a close relation with the depth of the film: the preferred orientation has been weakened as the depth of film turning from 707mu;m to 1007mu;m. copy; 2009 SPIE.

Original language	English (US)
Article number	72790J
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7279
DOIs	https://doi.org/10.1117/12.821153
State	Published - Jun 8 2009
Event	Photonics and Optoelectronics Meetings (POEM) 2008: Optoelectronic Devices and Integration - Wuhan, China Duration: Nov 24 2008 → Nov 27 2008

Keywords

Crystal characterization
CsI thin film
Preferred orientation
X-ray image detectors

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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title = "Influence of the crystal characterization of CsI thin film for X-ray image detectors",

abstract = "Powder CsI crystal has been deposited with vacuum thermal evaporation on three different kinds of substrates: Si, SiO2/Si and Pt/Si. We have analyzed and observed these CsI films with different depth and various preparation conditions by XRD measurement. Through analyzing, we find that in such process condition the crystal state of CsI film has a strong relationship with the crystal structure of substrate, and non-crystal substrate goes against crystallization. By contrasting standard XRD diagram of CsI(Tl), we discover that with the influence of the surface structure of substrate, CsI crystal film has a preferred orientation in (200) crystal face. We also notice that the preferred orientation of CsI film has a close relation with the depth of the film: the preferred orientation has been weakened as the depth of film turning from 707mu;m to 1007mu;m. copy; 2009 SPIE.",

keywords = "Crystal characterization, CsI thin film, Preferred orientation, X-ray image detectors",

author = "Shuang Liu and Xu Chen and Zhiyong Zhong and Falco, {Charles M.}",

year = "2009",

month = jun,

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doi = "10.1117/12.821153",

language = "English (US)",

volume = "7279",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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note = "Photonics and Optoelectronics Meetings (POEM) 2008: Optoelectronic Devices and Integration ; Conference date: 24-11-2008 Through 27-11-2008",

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TY - JOUR

T1 - Influence of the crystal characterization of CsI thin film for X-ray image detectors

AU - Liu, Shuang

AU - Chen, Xu

AU - Zhong, Zhiyong

AU - Falco, Charles M.

PY - 2009/6/8

Y1 - 2009/6/8

N2 - Powder CsI crystal has been deposited with vacuum thermal evaporation on three different kinds of substrates: Si, SiO2/Si and Pt/Si. We have analyzed and observed these CsI films with different depth and various preparation conditions by XRD measurement. Through analyzing, we find that in such process condition the crystal state of CsI film has a strong relationship with the crystal structure of substrate, and non-crystal substrate goes against crystallization. By contrasting standard XRD diagram of CsI(Tl), we discover that with the influence of the surface structure of substrate, CsI crystal film has a preferred orientation in (200) crystal face. We also notice that the preferred orientation of CsI film has a close relation with the depth of the film: the preferred orientation has been weakened as the depth of film turning from 707mu;m to 1007mu;m. copy; 2009 SPIE.

AB - Powder CsI crystal has been deposited with vacuum thermal evaporation on three different kinds of substrates: Si, SiO2/Si and Pt/Si. We have analyzed and observed these CsI films with different depth and various preparation conditions by XRD measurement. Through analyzing, we find that in such process condition the crystal state of CsI film has a strong relationship with the crystal structure of substrate, and non-crystal substrate goes against crystallization. By contrasting standard XRD diagram of CsI(Tl), we discover that with the influence of the surface structure of substrate, CsI crystal film has a preferred orientation in (200) crystal face. We also notice that the preferred orientation of CsI film has a close relation with the depth of the film: the preferred orientation has been weakened as the depth of film turning from 707mu;m to 1007mu;m. copy; 2009 SPIE.

KW - Crystal characterization

KW - CsI thin film

KW - Preferred orientation

KW - X-ray image detectors

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