Influence of the valenceband offset on absorption and gain in GaAs/GaNAs quantum wells

Research output: Contribution to conferencePaper

Abstract

This study demonstrates that gain-spectra could serve an unequivocal measure for the existence of a nonzero valenceband offset on GaAs/GaNAs quantum well structures. Gain spectra are calculated for different valenceband offsets.

Original languageEnglish (US)
Pages176-177
Number of pages2
DOIs
StatePublished - Jan 1 2000
EventConference on Lasers and Electro-Optics (CLEO 2000) - San Francisco, CA, USA
Duration: May 7 2000May 12 2000

Other

OtherConference on Lasers and Electro-Optics (CLEO 2000)
CitySan Francisco, CA, USA
Period5/7/005/12/00

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Hader, J., Koch, S. W., Moloney, J. V., & O'Reilly, E. P. (2000). Influence of the valenceband offset on absorption and gain in GaAs/GaNAs quantum wells. 176-177. Paper presented at Conference on Lasers and Electro-Optics (CLEO 2000), San Francisco, CA, USA, . https://doi.org/10.1109/cleo.2000.906879