Infrared spectroscopy of Si-O bonding in low-dose low-energy separation by implanted oxygen materials

Tula Jutarosaga, Jun Sik Jeoung, Supapan Seraphin

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

The effects of the processing conditions on the formation of buried oxide (BOX) layers in low-dose low-energy separation by implanted oxygen materials were investigated by using infrared spectroscopy and transmission electron microscopy. In as-implanted samples, the Si-O-Si stretching frequency increases either with increasing the oxygen dose or with decreasing implantation energy because the oxide composition becomes stoichiometric. However, the plateau frequencies were observed above a certain dose due to the compressive stress in the BOX layers. Upon ramping up to 1100 °C, the compressive stress decreases. Annealing beyond 1100 °C, the out diffusion of oxygen atoms was detected.

Original languageEnglish (US)
Pages (from-to)303-311
Number of pages9
JournalThin Solid Films
Volume476
Issue number2
DOIs
StatePublished - Apr 8 2005

Keywords

  • Infrared spectroscopy
  • Separation by implanted oxygen materials
  • Silicon oxide
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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