InGaAs/InGaAsP integrated tunable detector grown by chemical beam epitaxy

F. S. Choa, W. T. Tsang, R. A. Logan, R. P. Gnall, T. L. Koch, C. A. Burrus, M. C. Wu, Y. K. Chen, R. Kapre

Research output: Contribution to journalArticle

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Abstract

By controlling the thickness of the grating depth with chemical beam epitaxy (CBE) growth time, we report in this letter the design and performance of an integrated tunable detector. A carefully designed tunable active filter, which allows only one below threshold Fabry-Perot mode for operation, is integrated with a waveguide detector. The full tuning range of this kind of tunable device can now be utilized for system applications.

Original languageEnglish (US)
Pages (from-to)1836-1838
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number13
DOIs
StatePublished - 1993

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Choa, F. S., Tsang, W. T., Logan, R. A., Gnall, R. P., Koch, T. L., Burrus, C. A., Wu, M. C., Chen, Y. K., & Kapre, R. (1993). InGaAs/InGaAsP integrated tunable detector grown by chemical beam epitaxy. Applied Physics Letters, 63(13), 1836-1838. https://doi.org/10.1063/1.110678