InGaAs/InGaAsP quantum well distributed feedback laser

B. I. Miller, U. Koren, Thomas L Koch, G. Eisenstein, K. Y. Liou, R. S. Tucker, A. Shahar

Research output: Contribution to journalArticle

Abstract

The authors describe a deep 900-angstrom first-order grating that was fabricated on the top InGaAsP waveguide layer of a three-quantum-well separate-confinement heterostructure (SCH) wafer to provide for distributed-feedback (DFB) operation at 1.515 μm. The SCH wafer was grown by atmospheric organometallic vapor-phase epitaxy (OMVPE) and consisted of three InGaAs quantum wells of 80 angstrom each separated by a 200-angstrom InGaAsP barrier. On both sides of the quantum-well stack there was ≈1000 angstrom of 0.95-eV InGaAsP acting as a waveguide. Semi-insulating InP provided the 1.5-μm lateral electrical and optical confinement using a semi-insulating planar buried heterostructure configuration. Laser chips of 0.5- and 1-mm cavity lengths were mounted on copper studs and run continuously at room temperature, with current thresholds of 15 and 24 mA, respectively. There was a weak dependence of the current threshold and differential quantum efficiencies on cavity length, which confirms the low internal loss in quantum-well lasers. Below threshold, a stopband of ≈40 angstrom was seen in the laser spectrum. Above threshold two DFB modes were usually seen on each side of the stop band.

Original languageEnglish (US)
Pages (from-to)2455-2456
Number of pages2
JournalIEEE Transactions on Electron Devices
Volume35
Issue number12
StatePublished - Dec 1988
Externally publishedYes

Fingerprint

Distributed feedback lasers
distributed feedback lasers
quantum well lasers
Semiconductor quantum wells
Heterojunctions
quantum wells
threshold currents
Waveguides
wafers
waveguides
Feedback
Quantum well lasers
cavities
Vapor phase epitaxy
thresholds
Lasers
Organometallics
Laser modes
Quantum efficiency
vapor phase epitaxy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Miller, B. I., Koren, U., Koch, T. L., Eisenstein, G., Liou, K. Y., Tucker, R. S., & Shahar, A. (1988). InGaAs/InGaAsP quantum well distributed feedback laser. IEEE Transactions on Electron Devices, 35(12), 2455-2456.

InGaAs/InGaAsP quantum well distributed feedback laser. / Miller, B. I.; Koren, U.; Koch, Thomas L; Eisenstein, G.; Liou, K. Y.; Tucker, R. S.; Shahar, A.

In: IEEE Transactions on Electron Devices, Vol. 35, No. 12, 12.1988, p. 2455-2456.

Research output: Contribution to journalArticle

Miller, BI, Koren, U, Koch, TL, Eisenstein, G, Liou, KY, Tucker, RS & Shahar, A 1988, 'InGaAs/InGaAsP quantum well distributed feedback laser', IEEE Transactions on Electron Devices, vol. 35, no. 12, pp. 2455-2456.
Miller BI, Koren U, Koch TL, Eisenstein G, Liou KY, Tucker RS et al. InGaAs/InGaAsP quantum well distributed feedback laser. IEEE Transactions on Electron Devices. 1988 Dec;35(12):2455-2456.
Miller, B. I. ; Koren, U. ; Koch, Thomas L ; Eisenstein, G. ; Liou, K. Y. ; Tucker, R. S. ; Shahar, A. / InGaAs/InGaAsP quantum well distributed feedback laser. In: IEEE Transactions on Electron Devices. 1988 ; Vol. 35, No. 12. pp. 2455-2456.
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