InGaAs/InP multiple quantum well waveguide phase modulator

U. Koren, T. L. Koch, H. Presting, B. I. Miller

Research output: Contribution to journalArticle

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Abstract

A double heterostructure ridge waveguide with multiple quantum well InGaAs/InP core and InP cladding layers has been operated as a phase modulator at 1.52 μm wavelength. The observed phase shift coefficient was 12°/V mm. With a 1-mm-long device we have achieved a half wavelength shift at 15 V bias and a maximum phase shift of 420°at 35 V. Quantum confined Stark effect has been observed in the shorter 1.49-1.52 μm wavelength region. The ability to obtain λ/2 modulation with a short device and relatively low voltage makes this device very attractive for practical applications.

Original languageEnglish (US)
Pages (from-to)368-370
Number of pages3
JournalApplied Physics Letters
Volume50
Issue number7
DOIs
StatePublished - Dec 1 1987
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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