InGaAs/InP multiple quantum well waveguide phase modulator

U. Koren, Thomas L Koch, H. Presting, B. I. Miller

Research output: Contribution to journalArticle

48 Citations (Scopus)

Abstract

A double heterostructure ridge waveguide with multiple quantum well InGaAs/InP core and InP cladding layers has been operated as a phase modulator at 1.52 μm wavelength. The observed phase shift coefficient was 12°/V mm. With a 1-mm-long device we have achieved a half wavelength shift at 15 V bias and a maximum phase shift of 420°at 35 V. Quantum confined Stark effect has been observed in the shorter 1.49-1.52 μm wavelength region. The ability to obtain λ/2 modulation with a short device and relatively low voltage makes this device very attractive for practical applications.

Original languageEnglish (US)
Pages (from-to)368-370
Number of pages3
JournalApplied Physics Letters
Volume50
Issue number7
DOIs
StatePublished - 1987
Externally publishedYes

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modulators
quantum wells
waveguides
phase shift
wavelengths
Stark effect
low voltage
ridges
modulation
shift
coefficients

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

InGaAs/InP multiple quantum well waveguide phase modulator. / Koren, U.; Koch, Thomas L; Presting, H.; Miller, B. I.

In: Applied Physics Letters, Vol. 50, No. 7, 1987, p. 368-370.

Research output: Contribution to journalArticle

Koren, U. ; Koch, Thomas L ; Presting, H. ; Miller, B. I. / InGaAs/InP multiple quantum well waveguide phase modulator. In: Applied Physics Letters. 1987 ; Vol. 50, No. 7. pp. 368-370.
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