In0.53Ga0.47As(1 0 0) native oxide removal by liquid and gas phase HF/H2O chemistries

F. L. Lie, W. Rachmady, Anthony J Muscat

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The native oxide removal, surface termination, and stoichiometry of InGaAs(1 0 0) surfaces using liquid and gas phase HF/H2O etching were studied using X-ray photoelectron spectroscopy. Oxide removal in liquid phase HF stopped at the As layer, producing either elemental or H-terminated As. The surface oxidized upon air exposure, forming a 4.8 As2O3 layer on an As rich InGaAs sub-surface (17% In, 16% Ga, 66% As). A sub atmospheric gas phase HF/H2O process (100 Torr, 29 °C, 0.5 min) completely removed As2O3 and produced mainly In and Ga fluorides, since As fluoride is volatile at these experimental conditions. Once enough F accumulated on the surface, the water sticking probability decreased and the etching reaction proceeded at a much lower rate. The highest oxide removal (4.2 residual oxide) was achieved after 5 min of etching. As 2O3 and As2O5 were completely removed and considerably more InF3 and GaF3 were produced. The surface contained a group III-fluoride rich overlayer (34% In, 36% Ga) on a slightly As rich bulk (21% In, 21% Ga, and 58% As). The As rich InGaAs sub-surface produced with both liquid and the longer gas phase HF treatments is intrinsic to HF-InGaAs chemistry, although the oxide removal mechanism is likely different.

Original languageEnglish (US)
Pages (from-to)1656-1660
Number of pages5
JournalMicroelectronic Engineering
Volume87
Issue number9
DOIs
StatePublished - Nov 2010

Fingerprint

Oxides
liquid phases
Gases
chemistry
vapor phases
oxides
Liquids
Fluorides
fluorides
Etching
etching
Stoichiometry
stoichiometry
X ray photoelectron spectroscopy
photoelectron spectroscopy
Water
air
liquids
Air
water

Keywords

  • Gas phase
  • HF
  • InGaAs
  • Liquid phase
  • Native oxide removal
  • Surface preparation
  • Water

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

In0.53Ga0.47As(1 0 0) native oxide removal by liquid and gas phase HF/H2O chemistries. / Lie, F. L.; Rachmady, W.; Muscat, Anthony J.

In: Microelectronic Engineering, Vol. 87, No. 9, 11.2010, p. 1656-1660.

Research output: Contribution to journalArticle

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abstract = "The native oxide removal, surface termination, and stoichiometry of InGaAs(1 0 0) surfaces using liquid and gas phase HF/H2O etching were studied using X-ray photoelectron spectroscopy. Oxide removal in liquid phase HF stopped at the As layer, producing either elemental or H-terminated As. The surface oxidized upon air exposure, forming a 4.8 As2O3 layer on an As rich InGaAs sub-surface (17{\%} In, 16{\%} Ga, 66{\%} As). A sub atmospheric gas phase HF/H2O process (100 Torr, 29 °C, 0.5 min) completely removed As2O3 and produced mainly In and Ga fluorides, since As fluoride is volatile at these experimental conditions. Once enough F accumulated on the surface, the water sticking probability decreased and the etching reaction proceeded at a much lower rate. The highest oxide removal (4.2 residual oxide) was achieved after 5 min of etching. As 2O3 and As2O5 were completely removed and considerably more InF3 and GaF3 were produced. The surface contained a group III-fluoride rich overlayer (34{\%} In, 36{\%} Ga) on a slightly As rich bulk (21{\%} In, 21{\%} Ga, and 58{\%} As). The As rich InGaAs sub-surface produced with both liquid and the longer gas phase HF treatments is intrinsic to HF-InGaAs chemistry, although the oxide removal mechanism is likely different.",
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AB - The native oxide removal, surface termination, and stoichiometry of InGaAs(1 0 0) surfaces using liquid and gas phase HF/H2O etching were studied using X-ray photoelectron spectroscopy. Oxide removal in liquid phase HF stopped at the As layer, producing either elemental or H-terminated As. The surface oxidized upon air exposure, forming a 4.8 As2O3 layer on an As rich InGaAs sub-surface (17% In, 16% Ga, 66% As). A sub atmospheric gas phase HF/H2O process (100 Torr, 29 °C, 0.5 min) completely removed As2O3 and produced mainly In and Ga fluorides, since As fluoride is volatile at these experimental conditions. Once enough F accumulated on the surface, the water sticking probability decreased and the etching reaction proceeded at a much lower rate. The highest oxide removal (4.2 residual oxide) was achieved after 5 min of etching. As 2O3 and As2O5 were completely removed and considerably more InF3 and GaF3 were produced. The surface contained a group III-fluoride rich overlayer (34% In, 36% Ga) on a slightly As rich bulk (21% In, 21% Ga, and 58% As). The As rich InGaAs sub-surface produced with both liquid and the longer gas phase HF treatments is intrinsic to HF-InGaAs chemistry, although the oxide removal mechanism is likely different.

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