Insulating ultrathin silica films formed by a room-temperature sol-gel process

J. W. Robertson, M. Cai, Jeanne E Pemberton

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Sol-gel ultrathin dielectric surfaces were derived without high-temperature annealing step. The surfaces exhibit good electronic properties, high resistivities and intrinsically low capacitances.

Original languageEnglish (US)
Pages (from-to)662-667
Number of pages6
JournalAdvanced Materials
Volume13
Issue number9
DOIs
StatePublished - May 3 2001

Fingerprint

Silicon Dioxide
Sol-gel process
Silica
Electronic properties
Sol-gels
Capacitance
Annealing
Temperature

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Insulating ultrathin silica films formed by a room-temperature sol-gel process. / Robertson, J. W.; Cai, M.; Pemberton, Jeanne E.

In: Advanced Materials, Vol. 13, No. 9, 03.05.2001, p. 662-667.

Research output: Contribution to journalArticle

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