Integration of a gate electrode into carbon nanotube devices for scanning tunneling microscopy

J. Kong, Brian J Leroy, S. G. Lemay, C. Dekker

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We have developed a fabrication process for incorporating a gate electrode into suspended single-walled carbon nanotube structures for scanning tunneling spectroscopy studies. The nanotubes are synthesized by chemical vapor deposition directly on a metal surface. The high temperature (800°C) involved in the growth process poses challenging issues such as surface roughness and integrity of the structure which are addressed in this work. We demonstrate the effectiveness of the gate on the freestanding part of the nanotubes by performing tunneling spectroscopy that reveals Coulomb blockade diamonds. Our approach enables combined scanning tunneling microscopy and gated electron transport investigations of carbon nanotubes.

Original languageEnglish (US)
Article number112106
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number11
DOIs
StatePublished - Mar 14 2005
Externally publishedYes

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scanning tunneling microscopy
nanotubes
carbon nanotubes
electrodes
integrity
spectroscopy
metal surfaces
surface roughness
diamonds
vapor deposition
fabrication
scanning
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Integration of a gate electrode into carbon nanotube devices for scanning tunneling microscopy. / Kong, J.; Leroy, Brian J; Lemay, S. G.; Dekker, C.

In: Applied Physics Letters, Vol. 86, No. 11, 112106, 14.03.2005, p. 1-3.

Research output: Contribution to journalArticle

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