Interaction-assisted propagation of Coulomb-correlated electron-hole pairs in disordered semiconductors

D. Brinkmann, J. E. Golub, Stephan W Koch, P. Thomas, K. Maschke, I. Varga

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

A two-band model of a disordered semiconductor is used to analyze dynamical interaction induced weakening of localization in a system that is accessible to experimental verification. The results show a dependence on the sign of the two-particle interaction and on the optical excitation energy of the Coulomb-correlated electron-hole pair.

Original languageEnglish (US)
Pages (from-to)145-148
Number of pages4
JournalEuropean Physical Journal B
Volume10
Issue number1
StatePublished - Jul 1 1999
Externally publishedYes

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Particle interactions
Excitation energy
Photoexcitation
Beam plasma interactions
particle interactions
Semiconductor materials
propagation
Electrons
excitation
interactions
energy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Interaction-assisted propagation of Coulomb-correlated electron-hole pairs in disordered semiconductors. / Brinkmann, D.; Golub, J. E.; Koch, Stephan W; Thomas, P.; Maschke, K.; Varga, I.

In: European Physical Journal B, Vol. 10, No. 1, 01.07.1999, p. 145-148.

Research output: Contribution to journalArticle

Brinkmann, D, Golub, JE, Koch, SW, Thomas, P, Maschke, K & Varga, I 1999, 'Interaction-assisted propagation of Coulomb-correlated electron-hole pairs in disordered semiconductors', European Physical Journal B, vol. 10, no. 1, pp. 145-148.
Brinkmann, D. ; Golub, J. E. ; Koch, Stephan W ; Thomas, P. ; Maschke, K. ; Varga, I. / Interaction-assisted propagation of Coulomb-correlated electron-hole pairs in disordered semiconductors. In: European Physical Journal B. 1999 ; Vol. 10, No. 1. pp. 145-148.
@article{13e84e9747514b1a85ecfb7775851db3,
title = "Interaction-assisted propagation of Coulomb-correlated electron-hole pairs in disordered semiconductors",
abstract = "A two-band model of a disordered semiconductor is used to analyze dynamical interaction induced weakening of localization in a system that is accessible to experimental verification. The results show a dependence on the sign of the two-particle interaction and on the optical excitation energy of the Coulomb-correlated electron-hole pair.",
author = "D. Brinkmann and Golub, {J. E.} and Koch, {Stephan W} and P. Thomas and K. Maschke and I. Varga",
year = "1999",
month = "7",
day = "1",
language = "English (US)",
volume = "10",
pages = "145--148",
journal = "European Physical Journal B",
issn = "1434-6028",
publisher = "Springer New York",
number = "1",

}

TY - JOUR

T1 - Interaction-assisted propagation of Coulomb-correlated electron-hole pairs in disordered semiconductors

AU - Brinkmann, D.

AU - Golub, J. E.

AU - Koch, Stephan W

AU - Thomas, P.

AU - Maschke, K.

AU - Varga, I.

PY - 1999/7/1

Y1 - 1999/7/1

N2 - A two-band model of a disordered semiconductor is used to analyze dynamical interaction induced weakening of localization in a system that is accessible to experimental verification. The results show a dependence on the sign of the two-particle interaction and on the optical excitation energy of the Coulomb-correlated electron-hole pair.

AB - A two-band model of a disordered semiconductor is used to analyze dynamical interaction induced weakening of localization in a system that is accessible to experimental verification. The results show a dependence on the sign of the two-particle interaction and on the optical excitation energy of the Coulomb-correlated electron-hole pair.

UR - http://www.scopus.com/inward/record.url?scp=0000048282&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000048282&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0000048282

VL - 10

SP - 145

EP - 148

JO - European Physical Journal B

JF - European Physical Journal B

SN - 1434-6028

IS - 1

ER -