Abstract
A two-band model of a disordered semiconductor is used to analyze dynamical interaction induced weakening of localization in a system that is accessible to experimental verification. The results show a dependence on the sign of the two-particle interaction and on the optical excitation energy of the Coulomb-correlated electron-hole pair.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 145-148 |
| Number of pages | 4 |
| Journal | European Physical Journal B |
| Volume | 10 |
| Issue number | 1 |
| State | Published - Jul 1 1999 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Interaction-assisted propagation of Coulomb-correlated electron-hole pairs in disordered semiconductors. / Brinkmann, D.; Golub, J. E.; Koch, Stephan W; Thomas, P.; Maschke, K.; Varga, I.
In: European Physical Journal B, Vol. 10, No. 1, 01.07.1999, p. 145-148.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Interaction-assisted propagation of Coulomb-correlated electron-hole pairs in disordered semiconductors
AU - Brinkmann, D.
AU - Golub, J. E.
AU - Koch, Stephan W
AU - Thomas, P.
AU - Maschke, K.
AU - Varga, I.
PY - 1999/7/1
Y1 - 1999/7/1
N2 - A two-band model of a disordered semiconductor is used to analyze dynamical interaction induced weakening of localization in a system that is accessible to experimental verification. The results show a dependence on the sign of the two-particle interaction and on the optical excitation energy of the Coulomb-correlated electron-hole pair.
AB - A two-band model of a disordered semiconductor is used to analyze dynamical interaction induced weakening of localization in a system that is accessible to experimental verification. The results show a dependence on the sign of the two-particle interaction and on the optical excitation energy of the Coulomb-correlated electron-hole pair.
UR - http://www.scopus.com/inward/record.url?scp=0000048282&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0000048282&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0000048282
VL - 10
SP - 145
EP - 148
JO - European Physical Journal B
JF - European Physical Journal B
SN - 1434-6028
IS - 1
ER -