Abstract
A two-band model of a disordered semiconductor is used to analyze dynamical interaction induced weakening of localization in a system that is accessible to experimental verification. The results show a dependence on the sign of the two-particle interaction and on the optical excitation energy of the Coulomb-correlated electron-hole pair.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 145-148 |
| Number of pages | 4 |
| Journal | European Physical Journal B |
| Volume | 10 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jul 1 1999 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Brinkmann, D., Golub, J. E., Koch, S. W., Thomas, P., Maschke, K., & Varga, I. (1999). Interaction-assisted propagation of Coulomb-correlated electron-hole pairs in disordered semiconductors. European Physical Journal B, 10(1), 145-148. https://doi.org/10.1007/s100510050837