Interaction-assisted propagation of Coulomb-correlated electron-hole pairs in disordered semiconductors

D. Brinkmann, J. E. Golub, S. W. Koch, P. Thomas, K. Maschke, I. Varga

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

A two-band model of a disordered semiconductor is used to analyze dynamical interaction induced weakening of localization in a system that is accessible to experimental verification. The results show a dependence on the sign of the two-particle interaction and on the optical excitation energy of the Coulomb-correlated electron-hole pair.

Original languageEnglish (US)
Pages (from-to)145-148
Number of pages4
JournalEuropean Physical Journal B
Volume10
Issue number1
DOIs
StatePublished - Jul 1 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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