Interaction-assisted propagation of Coulomb-correlated electron-hole pairs in disordered semiconductors

D. Brinkmann; J. E. Golub; S. W. Koch; P. Thomas; K. Maschke; I. Varga

doi:10.1007/s100510050837

Interaction-assisted propagation of Coulomb-correlated electron-hole pairs in disordered semiconductors

D. Brinkmann, J. E. Golub, S. W. Koch, P. Thomas, K. Maschke, I. Varga

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

A two-band model of a disordered semiconductor is used to analyze dynamical interaction induced weakening of localization in a system that is accessible to experimental verification. The results show a dependence on the sign of the two-particle interaction and on the optical excitation energy of the Coulomb-correlated electron-hole pair.

Original language	English (US)
Pages (from-to)	145-148
Number of pages	4
Journal	European Physical Journal B
Volume	10
Issue number	1
DOIs	https://doi.org/10.1007/s100510050837
State	Published - Jul 1 1999
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1007/s100510050837

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title = "Interaction-assisted propagation of Coulomb-correlated electron-hole pairs in disordered semiconductors",

abstract = "A two-band model of a disordered semiconductor is used to analyze dynamical interaction induced weakening of localization in a system that is accessible to experimental verification. The results show a dependence on the sign of the two-particle interaction and on the optical excitation energy of the Coulomb-correlated electron-hole pair.",

author = "D. Brinkmann and Golub, {J. E.} and Koch, {S. W.} and P. Thomas and K. Maschke and I. Varga",

year = "1999",

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AU - Brinkmann, D.

AU - Golub, J. E.

AU - Koch, S. W.

AU - Thomas, P.

AU - Maschke, K.

AU - Varga, I.

PY - 1999/7/1

Y1 - 1999/7/1

N2 - A two-band model of a disordered semiconductor is used to analyze dynamical interaction induced weakening of localization in a system that is accessible to experimental verification. The results show a dependence on the sign of the two-particle interaction and on the optical excitation energy of the Coulomb-correlated electron-hole pair.

AB - A two-band model of a disordered semiconductor is used to analyze dynamical interaction induced weakening of localization in a system that is accessible to experimental verification. The results show a dependence on the sign of the two-particle interaction and on the optical excitation energy of the Coulomb-correlated electron-hole pair.

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JF - European Physical Journal B

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Interaction-assisted propagation of Coulomb-correlated electron-hole pairs in disordered semiconductors

Abstract

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