Abstract
A two-band model of a disordered semiconductor is used to analyze dynamical interaction induced weakening of localization in a system that is accessible to experimental verification. The results show a dependence on the sign of the two-particle interaction and on the optical excitation energy of the Coulomb-correlated electron-hole pair.
Original language | English (US) |
---|---|
Pages (from-to) | 145-148 |
Number of pages | 4 |
Journal | European Physical Journal B |
Volume | 10 |
Issue number | 1 |
DOIs | |
State | Published - Jul 1 1999 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics