Interaction between wafer cleanliness and wafer effects

P. W. Mertens, M. Meuris, H. F. Schmidt, S. Verhaverbeke, M. M. Heyns, D. Graef, A. Schnegg, M. Kubota, K. Dillenbeck, A. Philipossian

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

In this paper the effect of Fe, on gate oxide integrity (GOI) is discussed. It is demonstrated that the effect of Fe on GOI is strongly dependent on the silicon substrate. Therefore different kinds of wafers have been used. Whereas the Fe-contaminated wafers show circular patterns of degraded GOI performance, such patterns could not be observed on clean reference wafers. The GOI performance of the Fe-contaminated wafers is described using a new comprehensive statistical model.

Original languageEnglish (US)
Title of host publicationProceedings, Annual Technical Meeting - Institute of Environmental Sciences
Editors Anon
PublisherPubl by Inst of Environmental Sciences
Pages231-237
Number of pages7
ISBN (Print)1877862193
StatePublished - Dec 1 1993
Externally publishedYes
EventProceedings of the 39th Annual Technical Meeting of Institute of Environmental Sciences - Las Vegas, NV, USA
Duration: May 2 1993May 7 1993

Publication series

NameProceedings, Annual Technical Meeting - Institute of Environmental Sciences
Volume1
ISSN (Print)0073-9227

Other

OtherProceedings of the 39th Annual Technical Meeting of Institute of Environmental Sciences
CityLas Vegas, NV, USA
Period5/2/935/7/93

ASJC Scopus subject areas

  • Environmental Engineering

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  • Cite this

    Mertens, P. W., Meuris, M., Schmidt, H. F., Verhaverbeke, S., Heyns, M. M., Graef, D., Schnegg, A., Kubota, M., Dillenbeck, K., & Philipossian, A. (1993). Interaction between wafer cleanliness and wafer effects. In Anon (Ed.), Proceedings, Annual Technical Meeting - Institute of Environmental Sciences (pp. 231-237). (Proceedings, Annual Technical Meeting - Institute of Environmental Sciences; Vol. 1). Publ by Inst of Environmental Sciences.