A microscopic theory is presented for the Coulomb-interacting electron-hole system in an optically excited semiconductor that is probed by weak THz radiation. The relevant equations for the THz response are summarized and numerically evaluated for different optical excitation conditions. Experimental results are presented for a high-quality InGaAs/GaAs quantum-well system under resonant excitation. Formation and decay of excitonic populations are investigated.
|Original language||English (US)|
|Title of host publication||Advances in Solid State Physics|
|Number of pages||13|
|State||Published - Dec 1 2008|
|Name||Advances in Solid State Physics|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)