Interaction of THz radiation with semiconductors: Microscopic theory and experiments

J. T. Steiner, M. Kira, S. W. Koch, T. Grunwald, D. Köhler, S. Chatterjee, G. Khitrova, H. M. Gibbs

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

A microscopic theory is presented for the Coulomb-interacting electron-hole system in an optically excited semiconductor that is probed by weak THz radiation. The relevant equations for the THz response are summarized and numerically evaluated for different optical excitation conditions. Experimental results are presented for a high-quality InGaAs/GaAs quantum-well system under resonant excitation. Formation and decay of excitonic populations are investigated.

Original languageEnglish (US)
Title of host publicationAdvances in Solid State Physics
EditorsRolf Haug
Pages223-235
Number of pages13
DOIs
StatePublished - Dec 1 2008

Publication series

NameAdvances in Solid State Physics
Volume47
ISSN (Print)1438-4329

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Steiner, J. T., Kira, M., Koch, S. W., Grunwald, T., Köhler, D., Chatterjee, S., Khitrova, G., & Gibbs, H. M. (2008). Interaction of THz radiation with semiconductors: Microscopic theory and experiments. In R. Haug (Ed.), Advances in Solid State Physics (pp. 223-235). (Advances in Solid State Physics; Vol. 47). https://doi.org/10.1007/978-3-540-74325-5_18