Interband Transitions in InGaN Quantum Wells

Research output: Chapter in Book/Report/Conference proceedingChapter

12 Scopus citations
Original languageEnglish (US)
Title of host publicationNitride Semiconductor Devices
Subtitle of host publicationPrinciples and Simulation
PublisherWiley-VCH Verlag GmbH & Co. KGaA
Pages145-167
Number of pages23
ISBN (Print)9783527406678
DOIs
StatePublished - Mar 29 2007

Keywords

  • Auger Recombination
  • Interband transitions in InGaN quantum wells
  • Internal field effects
  • Material properties
  • Nitride semiconductor devices
  • Spontaneous emission

ASJC Scopus subject areas

  • Engineering(all)

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