Interband Transitions in InGaN Quantum Wells

Research output: Chapter in Book/Report/Conference proceedingChapter

12 Scopus citations
Original languageEnglish (US)
Title of host publicationNitride Semiconductor Devices: Principles and Simulation
PublisherWiley-VCH Verlag GmbH & Co. KGaA
Pages145-167
Number of pages23
ISBN (Print)9783527406678
DOIs
Publication statusPublished - Mar 29 2007

Keywords

  • Auger Recombination
  • Interband transitions in InGaN quantum wells
  • Internal field effects
  • Material properties
  • Nitride semiconductor devices
  • Spontaneous emission

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Hader, J., Moloney, J. V., Thränhardt, A., & Koch, S. W. (2007). Interband Transitions in InGaN Quantum Wells. In Nitride Semiconductor Devices: Principles and Simulation (pp. 145-167). Wiley-VCH Verlag GmbH & Co. KGaA. https://doi.org/10.1002/9783527610723.ch7