Interband Transitions in InGaN Quantum Wells

Research output: Chapter in Book/Report/Conference proceedingChapter

12 Citations (Scopus)
Original languageEnglish (US)
Title of host publicationNitride Semiconductor Devices: Principles and Simulation
PublisherWiley-VCH Verlag GmbH & Co. KGaA
Pages145-167
Number of pages23
ISBN (Print)9783527406678
DOIs
StatePublished - Mar 29 2007

Fingerprint

Spontaneous emission
Semiconductor quantum wells
Materials properties

Keywords

  • Auger Recombination
  • Interband transitions in InGaN quantum wells
  • Internal field effects
  • Material properties
  • Nitride semiconductor devices
  • Spontaneous emission

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Hader, J., Moloney, J. V., Thränhardt, A., & Koch, S. W. (2007). Interband Transitions in InGaN Quantum Wells. In Nitride Semiconductor Devices: Principles and Simulation (pp. 145-167). Wiley-VCH Verlag GmbH & Co. KGaA. https://doi.org/10.1002/9783527610723.ch7

Interband Transitions in InGaN Quantum Wells. / Hader, Jorg; Moloney, Jerome V; Thränhardt, Angela; Koch, Stephan W.

Nitride Semiconductor Devices: Principles and Simulation. Wiley-VCH Verlag GmbH & Co. KGaA, 2007. p. 145-167.

Research output: Chapter in Book/Report/Conference proceedingChapter

Hader, J, Moloney, JV, Thränhardt, A & Koch, SW 2007, Interband Transitions in InGaN Quantum Wells. in Nitride Semiconductor Devices: Principles and Simulation. Wiley-VCH Verlag GmbH & Co. KGaA, pp. 145-167. https://doi.org/10.1002/9783527610723.ch7
Hader J, Moloney JV, Thränhardt A, Koch SW. Interband Transitions in InGaN Quantum Wells. In Nitride Semiconductor Devices: Principles and Simulation. Wiley-VCH Verlag GmbH & Co. KGaA. 2007. p. 145-167 https://doi.org/10.1002/9783527610723.ch7
Hader, Jorg ; Moloney, Jerome V ; Thränhardt, Angela ; Koch, Stephan W. / Interband Transitions in InGaN Quantum Wells. Nitride Semiconductor Devices: Principles and Simulation. Wiley-VCH Verlag GmbH & Co. KGaA, 2007. pp. 145-167
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