Interband transitions of quantum wells and device structures containing Ga(N, As) and (Ga, In)(N, As)

P. J. Klar, H. Grüning, W. Heimbrodt, G. Weiser, J. Koch, K. Volz, W. Stolz, Stephan W Koch, S. Tomic, S. A. Choulis, T. J C Hosea, E. P. O'Reilly, M. Hofmann, Jorg Hader, Jerome V Moloney

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

The unusual N-induced band formation and band structure of Ga(N, As) and (Ga, In)(N, As) alloys are also reflected in the electronic structure of quantum wells (QWS) and device structures containing these non-amalgamation-type alloys. This review is divided into three parts. The first part deals with band structure aspects of bulk Ga(N, As) and motivates the possibility of a k·p-like parameterization of the band structure in terms of the level repulsion model between the conduction band edge of the host and a localized N-level. The second part presents experimental studies of interband transitions in Ga(N, As)/GaAs and (Ga, In)(N, As)/GaAs QW structures addressing band offsets, electron effective mass changes and an intrinsic mechanism contributing to the blueshift of the (Ga, In)(N, As) band gap on annealing. The observed interband transitions can be well described using a ten-band k·p model based on the level repulsion scheme. The third part deals with (Ga, In)(N, As)-based laser devices. The electronic structure of the active region of vertical-cavity surface-emitting laser and edge-emitter laser structures is studied by modulation spectroscopy. The gain of such structures is measured by optical methods and analysed in terms of a model combining the ten-band k·p description of the band structure and generalized Bloch equations.

Original languageEnglish (US)
Pages (from-to)830-842
Number of pages13
JournalSemiconductor Science and Technology
Volume17
Issue number8
DOIs
StatePublished - Aug 2002

Fingerprint

Band structure
Semiconductor quantum wells
quantum wells
Electronic structure
Lasers
Surface emitting lasers
Electron transitions
Parameterization
Conduction bands
Energy gap
electronic structure
Modulation
Spectroscopy
Annealing
Electrons
surface emitting lasers
parameterization
lasers
conduction bands
emitters

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Interband transitions of quantum wells and device structures containing Ga(N, As) and (Ga, In)(N, As). / Klar, P. J.; Grüning, H.; Heimbrodt, W.; Weiser, G.; Koch, J.; Volz, K.; Stolz, W.; Koch, Stephan W; Tomic, S.; Choulis, S. A.; Hosea, T. J C; O'Reilly, E. P.; Hofmann, M.; Hader, Jorg; Moloney, Jerome V.

In: Semiconductor Science and Technology, Vol. 17, No. 8, 08.2002, p. 830-842.

Research output: Contribution to journalArticle

Klar, PJ, Grüning, H, Heimbrodt, W, Weiser, G, Koch, J, Volz, K, Stolz, W, Koch, SW, Tomic, S, Choulis, SA, Hosea, TJC, O'Reilly, EP, Hofmann, M, Hader, J & Moloney, JV 2002, 'Interband transitions of quantum wells and device structures containing Ga(N, As) and (Ga, In)(N, As)', Semiconductor Science and Technology, vol. 17, no. 8, pp. 830-842. https://doi.org/10.1088/0268-1242/17/8/312
Klar, P. J. ; Grüning, H. ; Heimbrodt, W. ; Weiser, G. ; Koch, J. ; Volz, K. ; Stolz, W. ; Koch, Stephan W ; Tomic, S. ; Choulis, S. A. ; Hosea, T. J C ; O'Reilly, E. P. ; Hofmann, M. ; Hader, Jorg ; Moloney, Jerome V. / Interband transitions of quantum wells and device structures containing Ga(N, As) and (Ga, In)(N, As). In: Semiconductor Science and Technology. 2002 ; Vol. 17, No. 8. pp. 830-842.
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AU - Weiser, G.

AU - Koch, J.

AU - Volz, K.

AU - Stolz, W.

AU - Koch, Stephan W

AU - Tomic, S.

AU - Choulis, S. A.

AU - Hosea, T. J C

AU - O'Reilly, E. P.

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AU - Moloney, Jerome V

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