Interface electronic structure of organic semiconductors with controlled doping levels

J. Blochwitz, T. Fritz, M. Pfeiffer, K. Leo, D. M. Alloway, P. A. Lee, N. R. Armstrong

Research output: Contribution to journalArticle

238 Scopus citations

Abstract

We investigate the properties of inorganic - organic interfaces by ultraviolet and X-ray photoemission spectroscopy (UPS and XPS) and transport experiments. In particular, we study the interface between inorganic conductive substrates and organic layers that are intentionally p-type doped by co-evaporation of a matrix material and acceptor molecules. The photoemission spectra clearly show that the Fermi levels shift due to the doping and that the space charge layer width changes with doping (high doping - small width). The changes in the electronic structure of the interface due to doping agree well with results of transport experiments.

Original languageEnglish (US)
Pages (from-to)97-104
Number of pages8
JournalOrganic Electronics
Volume2
Issue number2
DOIs
StatePublished - Sep 2001

Keywords

  • Doped layers
  • Energy scheme
  • Organic Schottky junctions
  • Organic light emitting diodes
  • UPS
  • XPS

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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