Interface electronic structure of organic semiconductors with controlled doping levels

J. Blochwitz, T. Fritz, M. Pfeiffer, K. Leo, D. M. Alloway, P. A. Lee, Neal R Armstrong

Research output: Contribution to journalArticle

234 Citations (Scopus)

Abstract

We investigate the properties of inorganic - organic interfaces by ultraviolet and X-ray photoemission spectroscopy (UPS and XPS) and transport experiments. In particular, we study the interface between inorganic conductive substrates and organic layers that are intentionally p-type doped by co-evaporation of a matrix material and acceptor molecules. The photoemission spectra clearly show that the Fermi levels shift due to the doping and that the space charge layer width changes with doping (high doping - small width). The changes in the electronic structure of the interface due to doping agree well with results of transport experiments.

Original languageEnglish (US)
Pages (from-to)97-104
Number of pages8
JournalOrganic Electronics: physics, materials, applications
Volume2
Issue number2
DOIs
StatePublished - Sep 2001

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Semiconducting organic compounds
organic semiconductors
Electronic structure
Doping (additives)
electronic structure
photoelectric emission
matrix materials
Photoemission
Photoelectron spectroscopy
X ray spectroscopy
Fermi level
Electric space charge
space charge
Evaporation
X ray photoelectron spectroscopy
Experiments
evaporation
Molecules
shift
Substrates

Keywords

  • Doped layers
  • Energy scheme
  • Organic light emitting diodes
  • Organic Schottky junctions
  • UPS
  • XPS

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Interface electronic structure of organic semiconductors with controlled doping levels. / Blochwitz, J.; Fritz, T.; Pfeiffer, M.; Leo, K.; Alloway, D. M.; Lee, P. A.; Armstrong, Neal R.

In: Organic Electronics: physics, materials, applications, Vol. 2, No. 2, 09.2001, p. 97-104.

Research output: Contribution to journalArticle

Blochwitz, J. ; Fritz, T. ; Pfeiffer, M. ; Leo, K. ; Alloway, D. M. ; Lee, P. A. ; Armstrong, Neal R. / Interface electronic structure of organic semiconductors with controlled doping levels. In: Organic Electronics: physics, materials, applications. 2001 ; Vol. 2, No. 2. pp. 97-104.
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