Interfaces in Mo/Si multilayers

J. M. Slaughter, Patrick A. Kearney, Dean W. Schulze, Charles M. Falco, R. N. Watts, C. R. Hills, E. B. Saloman

Research output: Contribution to journalConference articlepeer-review

35 Scopus citations


Mo/Si multilayer mirrors with high peak reflectivities have been fabricated in many laboratories. This material pair works very well for wavelengths between 125 angstrom and 250 angstrom, and is therefore very useful in optics for astronomy and microscopy. However, complete understanding of the properties of these structures is presently limited by lack of understanding of the details of the interfaces. We report results from a study of Mo/Si interfaces performed with state-of-the-art surface science instruments and electron microscopy. Mo films and Mo/Si multilayers were deposited in ultra-high vacuum on clean Si surfaces using feedback-controlled electron-beam evaporators in a Molecular Beam Epitaxy growth chamber. These films were characterized with in situ RHEED, LEED, Auger, and XPS. Surprisingly, peak shifts in the XPS spectra indicate silicide formation at the interface for growth temperatures as low as 50 C (the lowest temperature studied). RHEED and LEED indicate that the silicide layer formed at low temperatures is amorphous. A contraction in the period of Mo/Si multilayers is observed as the deposition temperature is raised from 50 C to 200 C. This contraction can be accounted for by the formation of an interfacial silicide. TEM micrographs show an interfacial layer at the Mo on Si interfaces but not at the Si on Mo interfaces. Low-angle x-ray diffraction and synchrotron radiation characterization results for multilayers prepared under a variety of conditions are reported.

Original languageEnglish (US)
Pages (from-to)73-82
Number of pages10
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 1991
EventX-Ray/EUV Optics for Astronomy, Microscopy, Polarimetry, and Projection Lithography - San Diego, CA, USA
Duration: Jul 9 1990Jul 13 1990

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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