Interfacial layer formation on silicon by halogen activation

Adam G. Thorsness, Anthony J. Muscat

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Chlorine atoms were used to activate a Si(100) surface forming a self-limited monolayer of primarily silicon oxide as shown by X-ray photoelectron spectroscopy. A saturation coverage of 0.75 monolayers of chlorine atoms was deposited on Si(100) by exposing a surface at 300 K to Cl2 gas at 10 Torr under ultraviolet illumination. The oxide layer was formed by exposing the chlorine terminated surface to water vapor at 200 Torr and temperatures ranging from 325 to 373 K, followed by annealing to 800-900 K. The coverage of oxygen resulting from 325 K H2O exposures was directly correlated with a decrease in the Cl coverage and ranged from 0.2-1 monolayer. Complete removal of surface chlorine was achieved by higher temperature water exposures. The deposition of Ti using TiCl4 showed that -0.5 silanol (SiOH) group/nm2 were present on the surface. The activation of a Si(100) surface using a halogen demonstrates an alternative approach to grow ultrathin interfacial layers with monolayer control at low temperature.

Original languageEnglish (US)
Title of host publicationCleaning Technology in Semiconductor Device Manufacturing IX
PublisherElectrochemical Society Inc.
Pages309-316
Number of pages8
Edition3
ISBN (Electronic)9781607685395
StatePublished - 2006
Event9th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing - 2005 Fall Meeting of the Electrochemical Society - Los Angeles, CA, United States
Duration: Oct 16 2005Oct 21 2005

Publication series

NameECS Transactions
Number3
Volume1
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other9th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing - 2005 Fall Meeting of the Electrochemical Society
Country/TerritoryUnited States
CityLos Angeles, CA
Period10/16/0510/21/05

ASJC Scopus subject areas

  • Engineering(all)

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