Interfacial layer formation on silicon by halogen activation

Adam G. Thorsness, Anthony J. Muscat

Research output: Contribution to journalConference article

Abstract

Chlorine atoms were used to activate a Si(100) surface forming a self-limited monolayer of primarily silicon oxide as shown by X-ray photoelectron spectroscopy. A saturation coverage of 0.75 monolayers of chlorine atoms was deposited on Si(100) by exposing a surface at 300 K to Cl 2 gas at 10 Torr under ultraviolet illumination. The oxide layer was formed by exposing the chlorine terminated surface to water vapor at 200 Torr and temperatures ranging from 325 to 373 K, followed by annealing to 800-900 K. The coverage of oxygen resulting from 325 K H 2O exposures was directly correlated with a decrease in the Cl coverage and ranged from 0.2-1 monolayer. Complete removal of surface chlorine was achieved by higher temperature water exposures. The deposition of Ti using TiCl 4 showed that -0.5 silanol (SiOH) group/nm 2 were present on the surface. The activation of a Si(100) surface using a halogen demonstrates an alternative approach to grow ultrathin interfacial layers with monolayer control at low temperature.

Original languageEnglish (US)
Pages (from-to)309-316
Number of pages8
JournalECS Transactions
Volume1
Issue number3
StatePublished - Dec 1 2005
Event9th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing - 2005 Fall Meeting of the Electrochemical Society - Los Angeles, CA, United States
Duration: Oct 16 2005Oct 21 2005

ASJC Scopus subject areas

  • Engineering(all)

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