Interplay of phonon and disorder scattering in semiconductor quantum wells

A. Thränhardt, C. Ell, S. Mosor, G. Rupper, G. Khitrova, H. M. Gibbs, S. W. Koch

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

The interplay of radiative relaxation, structural disorder, and phonon scattering on the quantum-well absorption is studied at the level of a fully microscopic theory. Treating light field, phonon, and disorder coupling quantum mechanically, the theory accurately describes the quantum-well absorption for different degrees of disorder at different temperatures. The results show that disorder, phonon, and radiative broadening are not simply additive. The 1 s-exciton resonance deviates from the Lorentzian absorption line shape for narrow linewidths even when only homogeneous broadening is included. Good agreement with experimental absorption measurements on an In 0.04Ga0.96As/GaAs quantum-well structure is obtained. It is shown that only a careful evaluation of the comprehensive microscopic model can reliably identify homogeneous and inhomogeneous contributions to the linewidth.

Original languageEnglish (US)
Article number035316
Pages (from-to)353161-353169
Number of pages9
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume68
Issue number3
StatePublished - Jul 1 2003

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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