INTERVAL ESTIMATES FOR YIELD MODELING.

C Larrabee Winter, W. L. Cook

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In a recent paper C. H. Stapper (1983) notes that semiconductor yield cannot be accurately modeled by a single critical area or a single defect density. Instead he considers an expected number of faults to which each type of defect contributes and then suggests a model for the average number of faults. Stapper's approach illuminates several important features of yield modeling, but it also makes clear the inappropriateness of using a single value to estimate yield. The authors follow statistical convention by calling such estimates point estimates. Defect density is a random phenomenon; thus a function of defect density, namely yield, will also be a random variable. An analysis is proposed of the yield model that allows calculation of interval bounds for yield, based on flexible defect models. An examination is also made of the interval estimates for yield from an individual wafer, and the confidence intervals for average yield for a given type of wafer.

Original languageEnglish (US)
Pages (from-to)590-591
Number of pages2
JournalIEEE Journal of Solid-State Circuits
VolumeSC-21
Issue number4
StatePublished - Aug 1986
Externally publishedYes

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Defect density
Defects
Random variables
Semiconductor materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

INTERVAL ESTIMATES FOR YIELD MODELING. / Winter, C Larrabee; Cook, W. L.

In: IEEE Journal of Solid-State Circuits, Vol. SC-21, No. 4, 08.1986, p. 590-591.

Research output: Contribution to journalArticle

Winter, C Larrabee ; Cook, W. L. / INTERVAL ESTIMATES FOR YIELD MODELING. In: IEEE Journal of Solid-State Circuits. 1986 ; Vol. SC-21, No. 4. pp. 590-591.
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