### Abstract

In a recent paper C. H. Stapper (1983) notes that semiconductor yield cannot be accurately modeled by a single critical area or a single defect density. Instead he considers an expected number of faults to which each type of defect contributes and then suggests a model for the average number of faults. Stapper's approach illuminates several important features of yield modeling, but it also makes clear the inappropriateness of using a single value to estimate yield. The authors follow statistical convention by calling such estimates point estimates. Defect density is a random phenomenon; thus a function of defect density, namely yield, will also be a random variable. An analysis is proposed of the yield model that allows calculation of interval bounds for yield, based on flexible defect models. An examination is also made of the interval estimates for yield from an individual wafer, and the confidence intervals for average yield for a given type of wafer.

Original language | English (US) |
---|---|

Pages (from-to) | 590-591 |

Number of pages | 2 |

Journal | IEEE Journal of Solid-State Circuits |

Volume | SC-21 |

Issue number | 4 |

State | Published - Aug 1986 |

Externally published | Yes |

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### ASJC Scopus subject areas

- Electrical and Electronic Engineering

### Cite this

*IEEE Journal of Solid-State Circuits*,

*SC-21*(4), 590-591.

**INTERVAL ESTIMATES FOR YIELD MODELING.** / Winter, C Larrabee; Cook, W. L.

Research output: Contribution to journal › Article

*IEEE Journal of Solid-State Circuits*, vol. SC-21, no. 4, pp. 590-591.

}

TY - JOUR

T1 - INTERVAL ESTIMATES FOR YIELD MODELING.

AU - Winter, C Larrabee

AU - Cook, W. L.

PY - 1986/8

Y1 - 1986/8

N2 - In a recent paper C. H. Stapper (1983) notes that semiconductor yield cannot be accurately modeled by a single critical area or a single defect density. Instead he considers an expected number of faults to which each type of defect contributes and then suggests a model for the average number of faults. Stapper's approach illuminates several important features of yield modeling, but it also makes clear the inappropriateness of using a single value to estimate yield. The authors follow statistical convention by calling such estimates point estimates. Defect density is a random phenomenon; thus a function of defect density, namely yield, will also be a random variable. An analysis is proposed of the yield model that allows calculation of interval bounds for yield, based on flexible defect models. An examination is also made of the interval estimates for yield from an individual wafer, and the confidence intervals for average yield for a given type of wafer.

AB - In a recent paper C. H. Stapper (1983) notes that semiconductor yield cannot be accurately modeled by a single critical area or a single defect density. Instead he considers an expected number of faults to which each type of defect contributes and then suggests a model for the average number of faults. Stapper's approach illuminates several important features of yield modeling, but it also makes clear the inappropriateness of using a single value to estimate yield. The authors follow statistical convention by calling such estimates point estimates. Defect density is a random phenomenon; thus a function of defect density, namely yield, will also be a random variable. An analysis is proposed of the yield model that allows calculation of interval bounds for yield, based on flexible defect models. An examination is also made of the interval estimates for yield from an individual wafer, and the confidence intervals for average yield for a given type of wafer.

UR - http://www.scopus.com/inward/record.url?scp=0022767092&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022767092&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0022767092

VL - SC-21

SP - 590

EP - 591

JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

SN - 0018-9200

IS - 4

ER -