Intra-excitonic relaxation dynamics in ZnO

Alexej Chernikov, Martin Koch, Bernhard Laumer, Thomas A. Wassner, Martin Eickhoff, Stephan W. Koch, Sangam Chatterjee

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

The temperature and carrier-density dependent excitonic relaxation in bulk ZnO is studied by means of time-resolved photoluminescence. A rate-equation model is used to analyze the population dynamics and the transitions between different exciton states. Intra-excitonic (n 1) to (n 2) relaxation is clearly identified at low excitation densities and lattice temperatures with a characteristic time constant of 6 ± 0.5 ps.

Original languageEnglish (US)
Article number231910
JournalApplied Physics Letters
Volume99
Issue number23
DOIs
StatePublished - Dec 5 2011

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Chernikov, A., Koch, M., Laumer, B., Wassner, T. A., Eickhoff, M., Koch, S. W., & Chatterjee, S. (2011). Intra-excitonic relaxation dynamics in ZnO. Applied Physics Letters, 99(23), [231910]. https://doi.org/10.1063/1.3668102