Intrinsic disorder in graphene on transition metal dichalcogenide heterostructures

Matthew Yankowitz, Stefano Larentis, Kyounghwan Kim, Jiamin Xue, Devin McKenzie, Shengqiang Huang, Marina Paggen, Mazhar N. Ali, Robert J. Cava, Emanuel Tutuc, Brian J Leroy

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

Semiconducting transition metal dichalchogenides (TMDs) are a family of van der Waals bonded materials that have recently received interest as alternative substrates to hexagonal boron nitride (hBN) for graphene, as well as for components in novel graphene-based device heterostructures. We elucidate the local structural and electronic properties of graphene on TMD heterostructures through scanning tunneling microscopy and spectroscopy measurements. We find that crystalline defects intrinsic to TMDs induce substantial electronic scattering and charge carrier density fluctuations in the graphene. These signatures of local disorder explain the significant degradation of graphene device mobilities using TMD substrates, particularly compared to similar graphene on hBN devices.

Original languageEnglish (US)
Pages (from-to)1925-1929
Number of pages5
JournalNano Letters
Volume15
Issue number3
DOIs
StatePublished - Mar 11 2015

Fingerprint

Graphite
Graphene
Transition metals
Heterojunctions
graphene
transition metals
disorders
Boron nitride
boron nitrides
Scanning tunneling microscopy
Substrates
Charge carriers
Electronic properties
Carrier concentration
Structural properties
electronics
scanning tunneling microscopy
Spectroscopy
charge carriers
Scattering

Keywords

  • defects
  • graphene
  • Scanning tunneling microscopy/spectroscopy
  • scattering
  • transition metal dichalchogenides

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanical Engineering

Cite this

Yankowitz, M., Larentis, S., Kim, K., Xue, J., McKenzie, D., Huang, S., ... Leroy, B. J. (2015). Intrinsic disorder in graphene on transition metal dichalcogenide heterostructures. Nano Letters, 15(3), 1925-1929. https://doi.org/10.1021/nl5047736

Intrinsic disorder in graphene on transition metal dichalcogenide heterostructures. / Yankowitz, Matthew; Larentis, Stefano; Kim, Kyounghwan; Xue, Jiamin; McKenzie, Devin; Huang, Shengqiang; Paggen, Marina; Ali, Mazhar N.; Cava, Robert J.; Tutuc, Emanuel; Leroy, Brian J.

In: Nano Letters, Vol. 15, No. 3, 11.03.2015, p. 1925-1929.

Research output: Contribution to journalArticle

Yankowitz, M, Larentis, S, Kim, K, Xue, J, McKenzie, D, Huang, S, Paggen, M, Ali, MN, Cava, RJ, Tutuc, E & Leroy, BJ 2015, 'Intrinsic disorder in graphene on transition metal dichalcogenide heterostructures', Nano Letters, vol. 15, no. 3, pp. 1925-1929. https://doi.org/10.1021/nl5047736
Yankowitz M, Larentis S, Kim K, Xue J, McKenzie D, Huang S et al. Intrinsic disorder in graphene on transition metal dichalcogenide heterostructures. Nano Letters. 2015 Mar 11;15(3):1925-1929. https://doi.org/10.1021/nl5047736
Yankowitz, Matthew ; Larentis, Stefano ; Kim, Kyounghwan ; Xue, Jiamin ; McKenzie, Devin ; Huang, Shengqiang ; Paggen, Marina ; Ali, Mazhar N. ; Cava, Robert J. ; Tutuc, Emanuel ; Leroy, Brian J. / Intrinsic disorder in graphene on transition metal dichalcogenide heterostructures. In: Nano Letters. 2015 ; Vol. 15, No. 3. pp. 1925-1929.
@article{df478b715d1f4ece822601028b0ec621,
title = "Intrinsic disorder in graphene on transition metal dichalcogenide heterostructures",
abstract = "Semiconducting transition metal dichalchogenides (TMDs) are a family of van der Waals bonded materials that have recently received interest as alternative substrates to hexagonal boron nitride (hBN) for graphene, as well as for components in novel graphene-based device heterostructures. We elucidate the local structural and electronic properties of graphene on TMD heterostructures through scanning tunneling microscopy and spectroscopy measurements. We find that crystalline defects intrinsic to TMDs induce substantial electronic scattering and charge carrier density fluctuations in the graphene. These signatures of local disorder explain the significant degradation of graphene device mobilities using TMD substrates, particularly compared to similar graphene on hBN devices.",
keywords = "defects, graphene, Scanning tunneling microscopy/spectroscopy, scattering, transition metal dichalchogenides",
author = "Matthew Yankowitz and Stefano Larentis and Kyounghwan Kim and Jiamin Xue and Devin McKenzie and Shengqiang Huang and Marina Paggen and Ali, {Mazhar N.} and Cava, {Robert J.} and Emanuel Tutuc and Leroy, {Brian J}",
year = "2015",
month = "3",
day = "11",
doi = "10.1021/nl5047736",
language = "English (US)",
volume = "15",
pages = "1925--1929",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "3",

}

TY - JOUR

T1 - Intrinsic disorder in graphene on transition metal dichalcogenide heterostructures

AU - Yankowitz, Matthew

AU - Larentis, Stefano

AU - Kim, Kyounghwan

AU - Xue, Jiamin

AU - McKenzie, Devin

AU - Huang, Shengqiang

AU - Paggen, Marina

AU - Ali, Mazhar N.

AU - Cava, Robert J.

AU - Tutuc, Emanuel

AU - Leroy, Brian J

PY - 2015/3/11

Y1 - 2015/3/11

N2 - Semiconducting transition metal dichalchogenides (TMDs) are a family of van der Waals bonded materials that have recently received interest as alternative substrates to hexagonal boron nitride (hBN) for graphene, as well as for components in novel graphene-based device heterostructures. We elucidate the local structural and electronic properties of graphene on TMD heterostructures through scanning tunneling microscopy and spectroscopy measurements. We find that crystalline defects intrinsic to TMDs induce substantial electronic scattering and charge carrier density fluctuations in the graphene. These signatures of local disorder explain the significant degradation of graphene device mobilities using TMD substrates, particularly compared to similar graphene on hBN devices.

AB - Semiconducting transition metal dichalchogenides (TMDs) are a family of van der Waals bonded materials that have recently received interest as alternative substrates to hexagonal boron nitride (hBN) for graphene, as well as for components in novel graphene-based device heterostructures. We elucidate the local structural and electronic properties of graphene on TMD heterostructures through scanning tunneling microscopy and spectroscopy measurements. We find that crystalline defects intrinsic to TMDs induce substantial electronic scattering and charge carrier density fluctuations in the graphene. These signatures of local disorder explain the significant degradation of graphene device mobilities using TMD substrates, particularly compared to similar graphene on hBN devices.

KW - defects

KW - graphene

KW - Scanning tunneling microscopy/spectroscopy

KW - scattering

KW - transition metal dichalchogenides

UR - http://www.scopus.com/inward/record.url?scp=84924597010&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84924597010&partnerID=8YFLogxK

U2 - 10.1021/nl5047736

DO - 10.1021/nl5047736

M3 - Article

VL - 15

SP - 1925

EP - 1929

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 3

ER -