Intrinsic dynamics of quantum-dash lasers

Cheng Chen, Yang Wang, Hery Susanto Djie, Boon S. Ooi, Luke F. Lester, Thomas L. Koch, James C.M. Hwang

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

Temperature-dependent intrinsic modulation response of InAs/InAlGaAs quantum-dash lasers was investigated by using pulse optical injection modulation to minimize the effects of parasitics and self-heating. Compared to typical quantum-well lasers, the quantum-dash lasers were found to have comparable differential gain but approximately twice the gain compression factor, probably due to carrier heating by free-carrier absorption, as opposed to stimulated transition. Therefore, the narrower modulation bandwidth of the quantum-dash lasers than that of quantum-well lasers was attributed to their higher gain compression factor. In addition, as expected, quantum-dash lasers with relatively long and uniform dashes exhibit higher temperature stability than quantum-well lasers. However, the lasers with relatively short and nonuniform dashes exhibit stronger temperature dependence, probably due to their higher surface-to-volume ratio and nonuniform dash sizes.

Original languageEnglish (US)
Article number9
Pages (from-to)1167-1174
Number of pages8
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume17
Issue number5
DOIs
StatePublished - Feb 21 2011
Externally publishedYes

Keywords

  • Differential gain
  • microwave modulation
  • optical modulation
  • quantum wells
  • quantum wires
  • semiconductor lasers

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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    Chen, C., Wang, Y., Djie, H. S., Ooi, B. S., Lester, L. F., Koch, T. L., & Hwang, J. C. M. (2011). Intrinsic dynamics of quantum-dash lasers. IEEE Journal on Selected Topics in Quantum Electronics, 17(5), 1167-1174. [9]. https://doi.org/10.1109/JSTQE.2010.2103373