Investigation of defects in highly photosensitive germanosilicate thin films

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6 Scopus citations

Abstract

Germanosilicate glasses exhibit a significant photosensitive response which has been linked to the presence of oxygen- deficient germanium point defects in the glass structure. Based on this correlation, highly photosensitive thin films have been engineered which demonstrate the largest reported ultraviolet-induced refractive index perturbations (Δn) in an as-synthesized material. Our thin-film fabrication process avoids the use of hydrogen sensitizing treatments and, thus, yields stable films which retain their predisposition for large photosensitivity for over one year of storage. Understanding the nature of the defects in such films and their relationship to charge trapping and enhanced photosensitivity is of paramount importance in designing and optimizing the materials. Toward this end, our films have been studied using electron paramagnetic resonance (EPR), capacitance-voltage, and optical bleaching and absorption spectroscopies. We find experimental evidence suggesting a model in which a change in spin state and charge state of isolated paramagnetic neutral Ge dangling bonds form either diamagnetic positively or negatively charged Ge sites which are largely responsible for the charge trapping and photosensitivity in these thin films. We present experimental data and theoretical modeling to support our defect model and to show the relevance of the work.

Original languageEnglish (US)
Pages (from-to)93-99
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume2998
DOIs
StatePublished - 1997
EventPhotosensitive Optical Materials and Devices - San Jose, CA, United States
Duration: Feb 12 1997Feb 12 1997

Keywords

  • Germanosilicate
  • Glass
  • Photosensitivity
  • Reactive-atmosphere sputtering
  • Thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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