Investigation of droop-causing mechanisms in GaN-based devices using fully microscopic many-body theory

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Fully microscopic many-body models are used to calculate the radiative losses in GaN-based light emitting devices. It is shown how simpler models under-estimate these losses significantly. Using the high accuracy of the models allows to eliminate the corresponding loss parameter (B) and its density- and temperature dependence from the space of parameters that are used to fit effuciency data. This allows to study the dependencies of the remaining processes with high accuracy. Using this model, it is show that many processes that have been proposed as causes for the efficiency droop either have wrong dependencies, magnitudes or require unreasonable assumptions to explain the phenomena in general. The most plausible droop model appears to be a combination of carrier delocalization at very low temperatures and pump powers, density- activated defect-recombination at low to medium pumping and injection/escape losses at strong pumping.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume8625
DOIs
StatePublished - 2013
EventSPIE Symposium on Gallium Nitride Materials and Devices VIII - San Francisco, CA, United States
Duration: Feb 4 2013Feb 7 2013

Other

OtherSPIE Symposium on Gallium Nitride Materials and Devices VIII
CountryUnited States
CitySan Francisco, CA
Period2/4/132/7/13

Fingerprint

High Accuracy
pumping
Density Dependence
Model
Temperature Dependence
Recombination
Pump
escape
radiant flux density
Injection
Eliminate
Defects
Pumps
pumps
injection
Calculate
Temperature
temperature dependence
causes
defects

Keywords

  • Auger recombination
  • Defect recombination
  • Efficiency droop
  • GaN
  • Many-body physics
  • Photo luminescence
  • S emiconductor lasers

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Investigation of droop-causing mechanisms in GaN-based devices using fully microscopic many-body theory. / Hader, Jorg; Moloney, Jerome V; Koch, Stephan W.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8625 2013. 86251M.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hader, J, Moloney, JV & Koch, SW 2013, Investigation of droop-causing mechanisms in GaN-based devices using fully microscopic many-body theory. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 8625, 86251M, SPIE Symposium on Gallium Nitride Materials and Devices VIII, San Francisco, CA, United States, 2/4/13. https://doi.org/10.1117/12.2005134
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AB - Fully microscopic many-body models are used to calculate the radiative losses in GaN-based light emitting devices. It is shown how simpler models under-estimate these losses significantly. Using the high accuracy of the models allows to eliminate the corresponding loss parameter (B) and its density- and temperature dependence from the space of parameters that are used to fit effuciency data. This allows to study the dependencies of the remaining processes with high accuracy. Using this model, it is show that many processes that have been proposed as causes for the efficiency droop either have wrong dependencies, magnitudes or require unreasonable assumptions to explain the phenomena in general. The most plausible droop model appears to be a combination of carrier delocalization at very low temperatures and pump powers, density- activated defect-recombination at low to medium pumping and injection/escape losses at strong pumping.

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