Investigation of galvanic corrosion characteristics between tantalum nitride and poly silicon in dilute hf solutions

R. Govindarajan, M. Keswani, S. Raghavan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Galvanic corrosion characteristics between poly-Si and tantalum nitride (TaN) (area ratio 1:1 and 1:4) have been investigated in very dilute HF solutions (0.01 to 0.05%) containing controlled levels of dissolved oxygen. The increase in exposed cathode (metal) area as well as aeration results in higher corrosion of poly-Si. In de-aerated HF solutions (less than 0.5 ppm of O 2), irrespective of the area ratio, there appears to be no silicon loss. Morphological changes on poly-Si due to galvanic corrosion have been characterized using Scanning Electron Microscopy.

Original languageEnglish (US)
Title of host publicationSemiconductor Cleaning Science and Technology 12, SCST 12
Pages15-21
Number of pages7
Edition5
DOIs
StatePublished - Dec 1 2011
Event12th International Symposium on Semiconductor Cleaning Science and Technology, SCST12 - 220th ECS Meeting - Boston, MA, United States
Duration: Oct 10 2011Oct 11 2011

Publication series

NameECS Transactions
Number5
Volume41
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other12th International Symposium on Semiconductor Cleaning Science and Technology, SCST12 - 220th ECS Meeting
CountryUnited States
CityBoston, MA
Period10/10/1110/11/11

ASJC Scopus subject areas

  • Engineering(all)

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    Govindarajan, R., Keswani, M., & Raghavan, S. (2011). Investigation of galvanic corrosion characteristics between tantalum nitride and poly silicon in dilute hf solutions. In Semiconductor Cleaning Science and Technology 12, SCST 12 (5 ed., pp. 15-21). (ECS Transactions; Vol. 41, No. 5). https://doi.org/10.1149/1.3630821