Investigation of galvanic corrosion characteristics between tantalum nitride and poly silicon in dilute hf solutions

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Galvanic corrosion characteristics between poly-Si and tantalum nitride (TaN) (area ratio 1:1 and 1:4) have been investigated in very dilute HF solutions (0.01 to 0.05%) containing controlled levels of dissolved oxygen. The increase in exposed cathode (metal) area as well as aeration results in higher corrosion of poly-Si. In de-aerated HF solutions (less than 0.5 ppm of O 2), irrespective of the area ratio, there appears to be no silicon loss. Morphological changes on poly-Si due to galvanic corrosion have been characterized using Scanning Electron Microscopy.

Original languageEnglish (US)
Title of host publicationECS Transactions
Pages15-21
Number of pages7
Volume41
Edition5
DOIs
StatePublished - 2011
Event12th International Symposium on Semiconductor Cleaning Science and Technology, SCST12 - 220th ECS Meeting - Boston, MA, United States
Duration: Oct 10 2011Oct 11 2011

Other

Other12th International Symposium on Semiconductor Cleaning Science and Technology, SCST12 - 220th ECS Meeting
CountryUnited States
CityBoston, MA
Period10/10/1110/11/11

Fingerprint

Tantalum
Nitrides
Corrosion
Polysilicon
Silicon
Dissolved oxygen
Cathodes
Scanning electron microscopy
Metals

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Investigation of galvanic corrosion characteristics between tantalum nitride and poly silicon in dilute hf solutions. / Govindarajan, R.; Keswani, Manish K; Raghavan, Srini.

ECS Transactions. Vol. 41 5. ed. 2011. p. 15-21.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Govindarajan, R, Keswani, MK & Raghavan, S 2011, Investigation of galvanic corrosion characteristics between tantalum nitride and poly silicon in dilute hf solutions. in ECS Transactions. 5 edn, vol. 41, pp. 15-21, 12th International Symposium on Semiconductor Cleaning Science and Technology, SCST12 - 220th ECS Meeting, Boston, MA, United States, 10/10/11. https://doi.org/10.1149/1.3630821
@inproceedings{a71ec0cb03f34cc9bcf9df54ee646023,
title = "Investigation of galvanic corrosion characteristics between tantalum nitride and poly silicon in dilute hf solutions",
abstract = "Galvanic corrosion characteristics between poly-Si and tantalum nitride (TaN) (area ratio 1:1 and 1:4) have been investigated in very dilute HF solutions (0.01 to 0.05{\%}) containing controlled levels of dissolved oxygen. The increase in exposed cathode (metal) area as well as aeration results in higher corrosion of poly-Si. In de-aerated HF solutions (less than 0.5 ppm of O 2), irrespective of the area ratio, there appears to be no silicon loss. Morphological changes on poly-Si due to galvanic corrosion have been characterized using Scanning Electron Microscopy.",
author = "R. Govindarajan and Keswani, {Manish K} and Srini Raghavan",
year = "2011",
doi = "10.1149/1.3630821",
language = "English (US)",
isbn = "9781566779050",
volume = "41",
pages = "15--21",
booktitle = "ECS Transactions",
edition = "5",

}

TY - GEN

T1 - Investigation of galvanic corrosion characteristics between tantalum nitride and poly silicon in dilute hf solutions

AU - Govindarajan, R.

AU - Keswani, Manish K

AU - Raghavan, Srini

PY - 2011

Y1 - 2011

N2 - Galvanic corrosion characteristics between poly-Si and tantalum nitride (TaN) (area ratio 1:1 and 1:4) have been investigated in very dilute HF solutions (0.01 to 0.05%) containing controlled levels of dissolved oxygen. The increase in exposed cathode (metal) area as well as aeration results in higher corrosion of poly-Si. In de-aerated HF solutions (less than 0.5 ppm of O 2), irrespective of the area ratio, there appears to be no silicon loss. Morphological changes on poly-Si due to galvanic corrosion have been characterized using Scanning Electron Microscopy.

AB - Galvanic corrosion characteristics between poly-Si and tantalum nitride (TaN) (area ratio 1:1 and 1:4) have been investigated in very dilute HF solutions (0.01 to 0.05%) containing controlled levels of dissolved oxygen. The increase in exposed cathode (metal) area as well as aeration results in higher corrosion of poly-Si. In de-aerated HF solutions (less than 0.5 ppm of O 2), irrespective of the area ratio, there appears to be no silicon loss. Morphological changes on poly-Si due to galvanic corrosion have been characterized using Scanning Electron Microscopy.

UR - http://www.scopus.com/inward/record.url?scp=84857344084&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84857344084&partnerID=8YFLogxK

U2 - 10.1149/1.3630821

DO - 10.1149/1.3630821

M3 - Conference contribution

SN - 9781566779050

VL - 41

SP - 15

EP - 21

BT - ECS Transactions

ER -