Investigation of pre-tungsten silicide deposition wet chemical processing

Ara Philipossian, M. Moinpour, R. Wilkinson, V. H C Watt

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Removing the native oxide from the poly-Si surface prior to WSix deposition is essential for achieving high quality silicides as well as sufficient film adhesion, particularly after high temperature anneal or oxidation. Contact angle studies have been used to determine initial and time-dependent surface characteristics of several types of silicon surfaces following immersions in HF-based etchants for varying amounts of time. The morphological characteristics of the surfaces before and after exposure to etchants, as well as the relative etch rates and wetting capabilities of the etchants have been used to explain the following results: With respect to initial contact angle studies, the implanted & annealed polycrystalline silicon surface has the lowest contact angle followed by polycrystalline and monocrystalline surfaces. Longer immersion times yield lower initial contact angles. The 0.1% lightly-buffered HF solution results in the highest contact angle followed by the 1% buffered HF solution with surfactant, and the 1% HF solution. With respect to contact angle changes during ambient air exposure time, the as-deposited polycrystalline silicon surface is most stable followed by monocrystalline, and implanted & annealed polycrystalline silicon surfaces. Longer immersion times improve surface stability while the 0.1% lightly-buffered HF solution results in the most stable surface followed by the 1% buffered HF solution with surfactant, and the 1% HF solution.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages75-82
Number of pages8
Volume386
StatePublished - 1995
Externally publishedYes
EventProceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 17 1995Apr 21 1995

Other

OtherProceedings of the 1995 MRS Spring Meeting
CitySan Francisco, CA, USA
Period4/17/954/21/95

Fingerprint

Tungsten
Contact angle
Processing
Polysilicon
Surface-Active Agents
Surface active agents
Silicides
Silicon
Oxides
Wetting
Adhesion
Oxidation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Philipossian, A., Moinpour, M., Wilkinson, R., & Watt, V. H. C. (1995). Investigation of pre-tungsten silicide deposition wet chemical processing. In Materials Research Society Symposium - Proceedings (Vol. 386, pp. 75-82). Materials Research Society.

Investigation of pre-tungsten silicide deposition wet chemical processing. / Philipossian, Ara; Moinpour, M.; Wilkinson, R.; Watt, V. H C.

Materials Research Society Symposium - Proceedings. Vol. 386 Materials Research Society, 1995. p. 75-82.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Philipossian, A, Moinpour, M, Wilkinson, R & Watt, VHC 1995, Investigation of pre-tungsten silicide deposition wet chemical processing. in Materials Research Society Symposium - Proceedings. vol. 386, Materials Research Society, pp. 75-82, Proceedings of the 1995 MRS Spring Meeting, San Francisco, CA, USA, 4/17/95.
Philipossian A, Moinpour M, Wilkinson R, Watt VHC. Investigation of pre-tungsten silicide deposition wet chemical processing. In Materials Research Society Symposium - Proceedings. Vol. 386. Materials Research Society. 1995. p. 75-82
Philipossian, Ara ; Moinpour, M. ; Wilkinson, R. ; Watt, V. H C. / Investigation of pre-tungsten silicide deposition wet chemical processing. Materials Research Society Symposium - Proceedings. Vol. 386 Materials Research Society, 1995. pp. 75-82
@inproceedings{14115f12d3154937bad31783a53b3102,
title = "Investigation of pre-tungsten silicide deposition wet chemical processing",
abstract = "Removing the native oxide from the poly-Si surface prior to WSix deposition is essential for achieving high quality silicides as well as sufficient film adhesion, particularly after high temperature anneal or oxidation. Contact angle studies have been used to determine initial and time-dependent surface characteristics of several types of silicon surfaces following immersions in HF-based etchants for varying amounts of time. The morphological characteristics of the surfaces before and after exposure to etchants, as well as the relative etch rates and wetting capabilities of the etchants have been used to explain the following results: With respect to initial contact angle studies, the implanted & annealed polycrystalline silicon surface has the lowest contact angle followed by polycrystalline and monocrystalline surfaces. Longer immersion times yield lower initial contact angles. The 0.1{\%} lightly-buffered HF solution results in the highest contact angle followed by the 1{\%} buffered HF solution with surfactant, and the 1{\%} HF solution. With respect to contact angle changes during ambient air exposure time, the as-deposited polycrystalline silicon surface is most stable followed by monocrystalline, and implanted & annealed polycrystalline silicon surfaces. Longer immersion times improve surface stability while the 0.1{\%} lightly-buffered HF solution results in the most stable surface followed by the 1{\%} buffered HF solution with surfactant, and the 1{\%} HF solution.",
author = "Ara Philipossian and M. Moinpour and R. Wilkinson and Watt, {V. H C}",
year = "1995",
language = "English (US)",
volume = "386",
pages = "75--82",
booktitle = "Materials Research Society Symposium - Proceedings",
publisher = "Materials Research Society",

}

TY - GEN

T1 - Investigation of pre-tungsten silicide deposition wet chemical processing

AU - Philipossian, Ara

AU - Moinpour, M.

AU - Wilkinson, R.

AU - Watt, V. H C

PY - 1995

Y1 - 1995

N2 - Removing the native oxide from the poly-Si surface prior to WSix deposition is essential for achieving high quality silicides as well as sufficient film adhesion, particularly after high temperature anneal or oxidation. Contact angle studies have been used to determine initial and time-dependent surface characteristics of several types of silicon surfaces following immersions in HF-based etchants for varying amounts of time. The morphological characteristics of the surfaces before and after exposure to etchants, as well as the relative etch rates and wetting capabilities of the etchants have been used to explain the following results: With respect to initial contact angle studies, the implanted & annealed polycrystalline silicon surface has the lowest contact angle followed by polycrystalline and monocrystalline surfaces. Longer immersion times yield lower initial contact angles. The 0.1% lightly-buffered HF solution results in the highest contact angle followed by the 1% buffered HF solution with surfactant, and the 1% HF solution. With respect to contact angle changes during ambient air exposure time, the as-deposited polycrystalline silicon surface is most stable followed by monocrystalline, and implanted & annealed polycrystalline silicon surfaces. Longer immersion times improve surface stability while the 0.1% lightly-buffered HF solution results in the most stable surface followed by the 1% buffered HF solution with surfactant, and the 1% HF solution.

AB - Removing the native oxide from the poly-Si surface prior to WSix deposition is essential for achieving high quality silicides as well as sufficient film adhesion, particularly after high temperature anneal or oxidation. Contact angle studies have been used to determine initial and time-dependent surface characteristics of several types of silicon surfaces following immersions in HF-based etchants for varying amounts of time. The morphological characteristics of the surfaces before and after exposure to etchants, as well as the relative etch rates and wetting capabilities of the etchants have been used to explain the following results: With respect to initial contact angle studies, the implanted & annealed polycrystalline silicon surface has the lowest contact angle followed by polycrystalline and monocrystalline surfaces. Longer immersion times yield lower initial contact angles. The 0.1% lightly-buffered HF solution results in the highest contact angle followed by the 1% buffered HF solution with surfactant, and the 1% HF solution. With respect to contact angle changes during ambient air exposure time, the as-deposited polycrystalline silicon surface is most stable followed by monocrystalline, and implanted & annealed polycrystalline silicon surfaces. Longer immersion times improve surface stability while the 0.1% lightly-buffered HF solution results in the most stable surface followed by the 1% buffered HF solution with surfactant, and the 1% HF solution.

UR - http://www.scopus.com/inward/record.url?scp=0029475954&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029475954&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0029475954

VL - 386

SP - 75

EP - 82

BT - Materials Research Society Symposium - Proceedings

PB - Materials Research Society

ER -