Investigations of solution variables in a contactless copper electrodeposition process for 3D packaging applications

C. Weber, Z. Patterson, M. Zhao, R. Balachandran, R. Gouk, S. Verhaverbeke, F. Shadman, M. Keswani

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

A novel electrochemical method for contactless electrodeposition of copper onto silicon wafers has been investigated. Deposition parameters such as applied current, concentrations of deposition solution and supporting electrolyte were optimized to achieve high deposition rates as well as homogenous deposition of copper. Copper sulfate solution temperature of about 65 °C was shown to be suitable for achieving stable and high values of current density that translated to copper deposition rates of∼2.4 μm/min with good deposition uniformity.

Original languageEnglish (US)
Pages (from-to)578-584
Number of pages7
JournalMaterials Science in Semiconductor Processing
Volume30
DOIs
StatePublished - Feb 2015

Keywords

  • 3D integrated circuits
  • Bottom-up
  • Copper electroplating
  • Electrodeposition
  • Through silicon vias

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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