Ion beam lithography system using a high brightness H2+ ion source

Benjamin M. Siegel, Gary R. Hanson, Miklos Szilagyi, David R. Thomas, Richard J. Blackwell, Hongyul Paik

Research output: Contribution to journalConference article

2 Scopus citations

Abstract

The characteristics of the ion source determine the writing speed and resolution that can be realized in direct writing ion beam lithography with focussed ion probes. We have developed an H2+ ion source with very hiah brightness and low energy spread.1 Two ion beam lithography systems based on this source are being developed. CAD has been used to design two ion optical-deflector systems to focus this source to high resolution, high current density probes. The design parameters are calculated to produce ion probes 10 to 50 nm in diameter with current densities ≧ 100 amp/cm2. The systems will be used to investigate and apply ion beam lithography; ion-resist interactions, resist exposure and development characteristics, resolution limits, ion beam structuring of devices, etc.

Original languageEnglish (US)
Pages (from-to)152-157
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume333
DOIs
StatePublished - Jun 30 1982
Externally publishedYes
EventSubmicron Lithography I 1982 - Santa Clara, United States
Duration: Jan 1 1982Jan 2 1982

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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