Large blueshift of the band gap of GaAsSbAlSb quantum wells with ion implantation

Xiaolan Sun, Nasser Peyghambarian, Alan R. Kost, Nayer Eradat

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Abstract

We describe studies of intermixing in GaAsSbAlSb quantum wells with 18.8% and 31% arsenic, grown on GaSb substrates. Samples were implanted with a 1× 1013 cm-2 dose of 330 keV boron ions and annealed. The band gap for the samples was determined from photoluminescence. The maximum blueshift of the band gap was 141 nm (86 meV) for the quantum wells with 18.8% arsenic and 198 nm (124 meV) for the quantum wells with 31% arsenic. The blueshifts are attributed to interdiffusion of both group-III and group-V constituents. Photoluminescence strength generally increased with annealing temperature.

Original languageEnglish (US)
Article number011905
Pages (from-to)011905-1-011905-3
JournalApplied Physics Letters
Volume86
Issue number1
DOIs
StatePublished - Jan 1 2005

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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