Large spin Hall angle in vanadium film/639/766/119/1001/639/766/119/544/120/123/142/126/144/145 article

T. Wang, Weigang Wang, Y. Xie, M. A. Warsi, J. Wu, Y. Chen, V. O. Lorenz, X. Fan, J. Q. Xiao

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We report a large spin Hall angle observed in vanadium films sputter-grown at room temperature, which have small grain size and consist of a mixture of body centered tetragonal (bct) and body centered cubic (bcc) structures. The spin Hall angle is as large as θ V =-0.071 ± 0.003, comparable to that of platinum, θ Pt = 0.076 ± 0.007, and is much larger than that of bcc V film grown at 400 °C, θ V-bcc =-0.012 ± 0.002. Similar to β-tantalum and β-tungsten, the sputter-grown V films also have a high resistivity of more than 200 μΩ.cm. Surprisingly, the spin diffusion length is still long at 16.3 nm. This finding not only indicates that specific crystalline structure can lead to a large spin Hall effect but also suggests 3d light metals should not be ruled out in the search for materials with large spin Hall angle.

Original languageEnglish (US)
Article number1306
JournalScientific Reports
Volume7
Issue number1
DOIs
StatePublished - Dec 1 2017
Externally publishedYes

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vanadium
diffusion length
tantalum
Hall effect
tungsten
platinum
grain size
electrical resistivity
room temperature
metals

ASJC Scopus subject areas

  • General

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Large spin Hall angle in vanadium film/639/766/119/1001/639/766/119/544/120/123/142/126/144/145 article. / Wang, T.; Wang, Weigang; Xie, Y.; Warsi, M. A.; Wu, J.; Chen, Y.; Lorenz, V. O.; Fan, X.; Xiao, J. Q.

In: Scientific Reports, Vol. 7, No. 1, 1306, 01.12.2017.

Research output: Contribution to journalArticle

Wang, T. ; Wang, Weigang ; Xie, Y. ; Warsi, M. A. ; Wu, J. ; Chen, Y. ; Lorenz, V. O. ; Fan, X. ; Xiao, J. Q. / Large spin Hall angle in vanadium film/639/766/119/1001/639/766/119/544/120/123/142/126/144/145 article. In: Scientific Reports. 2017 ; Vol. 7, No. 1.
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AU - Warsi, M. A.

AU - Wu, J.

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AU - Lorenz, V. O.

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