Laser-induced darkening in semiconductor-doped glasses

J. Malhotra, D. J. Hagan, B. G. Potter

Research output: Contribution to journalArticle

86 Scopus citations

Abstract

We have performed experiments to characterize permanent laser-induced darkening in CdS.Sel,- semiconductor-doped glasses with picosecond pulses as a function of fluence, repetition rate, and pulse width. We find that the darkening occurs by means of a nonlinear process that exhibits an anomalous dependence on pulse width. Transmission spectra show that the induced darkening is uniformover the spectral range from the absorption edge out to 820 Am. Darkening in a number of different glasses is compared. On the basis of our results we propose a mechanism that involves photoassistedtrapping of electrons from the semiconductor microcrystallites into states within the glass host material.

Original languageEnglish (US)
Pages (from-to)1531-1536
Number of pages6
JournalJournal of the Optical Society of America B: Optical Physics
Volume8
Issue number7
DOIs
StatePublished - Jul 1991
Externally publishedYes

ASJC Scopus subject areas

  • Statistical and Nonlinear Physics
  • Atomic and Molecular Physics, and Optics

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