Lattice mismatched growth for mid-IR VECSELs

G. Balakrishnan, T. J. Rotter, P. Ahirwar, S. P. Clark, V. Patel, A. Albrecht, C. P. Hains, Yi Ying Lai, T. L. Wang, J. M. Yarborough, D. Mathine, Yushi Kaneda, Jerome V Moloney, Jorg Hader, Stephan W Koch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We demonstrate a novel epitaxial process for the growth of low-dislocation density GaSb on GaAs. The growth mode involves the formation of large arrays of periodic 90° misfit dislocations at the interface between the two binary alloys which results in a completely strain relieved III-Sb epi-layer without the need for thick buffer layers. This epitaxial process is used for the growth of antimonide active regions directly on GaAs/AlGaAs distributed Bragg Reflectors (DBRs) resulting in 2 μm VECSELs on GaAs substrates.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume7919
DOIs
StatePublished - 2011
EventVertical External Cavity Surface Emitting Lasers, VECSELs - San Francisco, CA, United States
Duration: Jan 24 2011Jan 25 2011

Other

OtherVertical External Cavity Surface Emitting Lasers, VECSELs
CountryUnited States
CitySan Francisco, CA
Period1/24/111/25/11

Fingerprint

Mid-infrared
Gallium Arsenide
Dislocation
Distributed Bragg reflectors
Binary Alloys
Binary alloys
Reflector
Bragg reflectors
binary alloys
Buffer layers
Dislocations (crystals)
aluminum gallium arsenides
Buffer
buffers
Substrate
Substrates
Demonstrate
gallium arsenide

Keywords

  • Antimonides
  • MWIR
  • VECSEL

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Balakrishnan, G., Rotter, T. J., Ahirwar, P., Clark, S. P., Patel, V., Albrecht, A., ... Koch, S. W. (2011). Lattice mismatched growth for mid-IR VECSELs. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 7919). [79190G] https://doi.org/10.1117/12.874234

Lattice mismatched growth for mid-IR VECSELs. / Balakrishnan, G.; Rotter, T. J.; Ahirwar, P.; Clark, S. P.; Patel, V.; Albrecht, A.; Hains, C. P.; Lai, Yi Ying; Wang, T. L.; Yarborough, J. M.; Mathine, D.; Kaneda, Yushi; Moloney, Jerome V; Hader, Jorg; Koch, Stephan W.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7919 2011. 79190G.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Balakrishnan, G, Rotter, TJ, Ahirwar, P, Clark, SP, Patel, V, Albrecht, A, Hains, CP, Lai, YY, Wang, TL, Yarborough, JM, Mathine, D, Kaneda, Y, Moloney, JV, Hader, J & Koch, SW 2011, Lattice mismatched growth for mid-IR VECSELs. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 7919, 79190G, Vertical External Cavity Surface Emitting Lasers, VECSELs, San Francisco, CA, United States, 1/24/11. https://doi.org/10.1117/12.874234
Balakrishnan G, Rotter TJ, Ahirwar P, Clark SP, Patel V, Albrecht A et al. Lattice mismatched growth for mid-IR VECSELs. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7919. 2011. 79190G https://doi.org/10.1117/12.874234
Balakrishnan, G. ; Rotter, T. J. ; Ahirwar, P. ; Clark, S. P. ; Patel, V. ; Albrecht, A. ; Hains, C. P. ; Lai, Yi Ying ; Wang, T. L. ; Yarborough, J. M. ; Mathine, D. ; Kaneda, Yushi ; Moloney, Jerome V ; Hader, Jorg ; Koch, Stephan W. / Lattice mismatched growth for mid-IR VECSELs. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7919 2011.
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