Abstract
In a recent paper, Intonti et al. attributed [Phys. Rev. Lett. 87, 076801 (2001)] a 3-me V peak in the autocorrelation spectrum of low-temperature nanophotoluminescence spectra of a single disordered GaAs quantum well to level repulsion, i.e., to the statistical analog of an avoided crossing due to overlapping wave functions in the disorder potential. Our data, which reproduce their findings very nearly, are taken to an additional test employing filter functions, which clearly shows that the 3-me V peak is associated with low-energy states-in striking contrast to the level repulsion scenario. By a careful analysis of the high-energy states, however, we are able to identify a second peak around 1.5 me V which we attribute to level repulsion. The experiments are compared with simple model calculations, which support our interpretation.
| Original language | English (US) |
|---|---|
| Article number | 205327 |
| Pages (from-to) | 2053271-2053279 |
| Number of pages | 9 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 65 |
| Issue number | 20 |
| State | Published - May 15 2002 |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Level repulsion in nanophotoluminescence spectra from single GaAs quantum wells. / Von Freymann, G.; Neuberth, U.; Deubel, M.; Wegener, M.; Khitrova, Galina; Gibbs, H. M.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 65, No. 20, 205327, 15.05.2002, p. 2053271-2053279.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Level repulsion in nanophotoluminescence spectra from single GaAs quantum wells
AU - Von Freymann, G.
AU - Neuberth, U.
AU - Deubel, M.
AU - Wegener, M.
AU - Khitrova, Galina
AU - Gibbs, H. M.
PY - 2002/5/15
Y1 - 2002/5/15
N2 - In a recent paper, Intonti et al. attributed [Phys. Rev. Lett. 87, 076801 (2001)] a 3-me V peak in the autocorrelation spectrum of low-temperature nanophotoluminescence spectra of a single disordered GaAs quantum well to level repulsion, i.e., to the statistical analog of an avoided crossing due to overlapping wave functions in the disorder potential. Our data, which reproduce their findings very nearly, are taken to an additional test employing filter functions, which clearly shows that the 3-me V peak is associated with low-energy states-in striking contrast to the level repulsion scenario. By a careful analysis of the high-energy states, however, we are able to identify a second peak around 1.5 me V which we attribute to level repulsion. The experiments are compared with simple model calculations, which support our interpretation.
AB - In a recent paper, Intonti et al. attributed [Phys. Rev. Lett. 87, 076801 (2001)] a 3-me V peak in the autocorrelation spectrum of low-temperature nanophotoluminescence spectra of a single disordered GaAs quantum well to level repulsion, i.e., to the statistical analog of an avoided crossing due to overlapping wave functions in the disorder potential. Our data, which reproduce their findings very nearly, are taken to an additional test employing filter functions, which clearly shows that the 3-me V peak is associated with low-energy states-in striking contrast to the level repulsion scenario. By a careful analysis of the high-energy states, however, we are able to identify a second peak around 1.5 me V which we attribute to level repulsion. The experiments are compared with simple model calculations, which support our interpretation.
UR - http://www.scopus.com/inward/record.url?scp=0037095383&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0037095383&partnerID=8YFLogxK
M3 - Article
VL - 65
SP - 2053271
EP - 2053279
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 0163-1829
IS - 20
M1 - 205327
ER -