Level repulsion in nanophotoluminescence spectra from single GaAs quantum wells

G. von Freymann, U. Neuberth, M. Deubel, M. Wegener, G. Khitrova, H. M. Gibbs

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Abstract

In a recent paper, Intonti et al. attributed [Phys. Rev. Lett. 87, 076801 (2001)] a 3-me V peak in the autocorrelation spectrum of low-temperature nanophotoluminescence spectra of a single disordered GaAs quantum well to level repulsion, i.e., to the statistical analog of an avoided crossing due to overlapping wave functions in the disorder potential. Our data, which reproduce their findings very nearly, are taken to an additional test employing filter functions, which clearly shows that the 3-me V peak is associated with low-energy states-in striking contrast to the level repulsion scenario. By a careful analysis of the high-energy states, however, we are able to identify a second peak around 1.5 me V which we attribute to level repulsion. The experiments are compared with simple model calculations, which support our interpretation.

Original languageEnglish (US)
Article number205327
Pages (from-to)2053271-2053279
Number of pages9
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume65
Issue number20
DOIs
StatePublished - May 15 2002

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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