Level repulsion in nanophotoluminescence spectra from single GaAs quantum wells

G. Von Freymann, U. Neuberth, M. Deubel, M. Wegener, Galina Khitrova, H. M. Gibbs

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

In a recent paper, Intonti et al. attributed [Phys. Rev. Lett. 87, 076801 (2001)] a 3-me V peak in the autocorrelation spectrum of low-temperature nanophotoluminescence spectra of a single disordered GaAs quantum well to level repulsion, i.e., to the statistical analog of an avoided crossing due to overlapping wave functions in the disorder potential. Our data, which reproduce their findings very nearly, are taken to an additional test employing filter functions, which clearly shows that the 3-me V peak is associated with low-energy states-in striking contrast to the level repulsion scenario. By a careful analysis of the high-energy states, however, we are able to identify a second peak around 1.5 me V which we attribute to level repulsion. The experiments are compared with simple model calculations, which support our interpretation.

Original languageEnglish (US)
Article number205327
Pages (from-to)2053271-2053279
Number of pages9
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume65
Issue number20
StatePublished - May 15 2002

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Electron energy levels
Semiconductor quantum wells
quantum wells
Wave functions
Autocorrelation
autocorrelation
wave functions
disorders
analogs
filters
energy
Experiments
Temperature
gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Von Freymann, G., Neuberth, U., Deubel, M., Wegener, M., Khitrova, G., & Gibbs, H. M. (2002). Level repulsion in nanophotoluminescence spectra from single GaAs quantum wells. Physical Review B - Condensed Matter and Materials Physics, 65(20), 2053271-2053279. [205327].

Level repulsion in nanophotoluminescence spectra from single GaAs quantum wells. / Von Freymann, G.; Neuberth, U.; Deubel, M.; Wegener, M.; Khitrova, Galina; Gibbs, H. M.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 65, No. 20, 205327, 15.05.2002, p. 2053271-2053279.

Research output: Contribution to journalArticle

Von Freymann, G, Neuberth, U, Deubel, M, Wegener, M, Khitrova, G & Gibbs, HM 2002, 'Level repulsion in nanophotoluminescence spectra from single GaAs quantum wells', Physical Review B - Condensed Matter and Materials Physics, vol. 65, no. 20, 205327, pp. 2053271-2053279.
Von Freymann G, Neuberth U, Deubel M, Wegener M, Khitrova G, Gibbs HM. Level repulsion in nanophotoluminescence spectra from single GaAs quantum wells. Physical Review B - Condensed Matter and Materials Physics. 2002 May 15;65(20):2053271-2053279. 205327.
Von Freymann, G. ; Neuberth, U. ; Deubel, M. ; Wegener, M. ; Khitrova, Galina ; Gibbs, H. M. / Level repulsion in nanophotoluminescence spectra from single GaAs quantum wells. In: Physical Review B - Condensed Matter and Materials Physics. 2002 ; Vol. 65, No. 20. pp. 2053271-2053279.
@article{c99a3b3cac4c4617a339f70a98cad53b,
title = "Level repulsion in nanophotoluminescence spectra from single GaAs quantum wells",
abstract = "In a recent paper, Intonti et al. attributed [Phys. Rev. Lett. 87, 076801 (2001)] a 3-me V peak in the autocorrelation spectrum of low-temperature nanophotoluminescence spectra of a single disordered GaAs quantum well to level repulsion, i.e., to the statistical analog of an avoided crossing due to overlapping wave functions in the disorder potential. Our data, which reproduce their findings very nearly, are taken to an additional test employing filter functions, which clearly shows that the 3-me V peak is associated with low-energy states-in striking contrast to the level repulsion scenario. By a careful analysis of the high-energy states, however, we are able to identify a second peak around 1.5 me V which we attribute to level repulsion. The experiments are compared with simple model calculations, which support our interpretation.",
author = "{Von Freymann}, G. and U. Neuberth and M. Deubel and M. Wegener and Galina Khitrova and Gibbs, {H. M.}",
year = "2002",
month = "5",
day = "15",
language = "English (US)",
volume = "65",
pages = "2053271--2053279",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics Publising LLC",
number = "20",

}

TY - JOUR

T1 - Level repulsion in nanophotoluminescence spectra from single GaAs quantum wells

AU - Von Freymann, G.

AU - Neuberth, U.

AU - Deubel, M.

AU - Wegener, M.

AU - Khitrova, Galina

AU - Gibbs, H. M.

PY - 2002/5/15

Y1 - 2002/5/15

N2 - In a recent paper, Intonti et al. attributed [Phys. Rev. Lett. 87, 076801 (2001)] a 3-me V peak in the autocorrelation spectrum of low-temperature nanophotoluminescence spectra of a single disordered GaAs quantum well to level repulsion, i.e., to the statistical analog of an avoided crossing due to overlapping wave functions in the disorder potential. Our data, which reproduce their findings very nearly, are taken to an additional test employing filter functions, which clearly shows that the 3-me V peak is associated with low-energy states-in striking contrast to the level repulsion scenario. By a careful analysis of the high-energy states, however, we are able to identify a second peak around 1.5 me V which we attribute to level repulsion. The experiments are compared with simple model calculations, which support our interpretation.

AB - In a recent paper, Intonti et al. attributed [Phys. Rev. Lett. 87, 076801 (2001)] a 3-me V peak in the autocorrelation spectrum of low-temperature nanophotoluminescence spectra of a single disordered GaAs quantum well to level repulsion, i.e., to the statistical analog of an avoided crossing due to overlapping wave functions in the disorder potential. Our data, which reproduce their findings very nearly, are taken to an additional test employing filter functions, which clearly shows that the 3-me V peak is associated with low-energy states-in striking contrast to the level repulsion scenario. By a careful analysis of the high-energy states, however, we are able to identify a second peak around 1.5 me V which we attribute to level repulsion. The experiments are compared with simple model calculations, which support our interpretation.

UR - http://www.scopus.com/inward/record.url?scp=0037095383&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037095383&partnerID=8YFLogxK

M3 - Article

VL - 65

SP - 2053271

EP - 2053279

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 20

M1 - 205327

ER -