Light-induced gaps in semiconductor band-to-band transitions

Q. T. Vu, H. Haug, O. D. Mücke, T. Tritschler, M. Wegener, G. Khitrova, H. M. Gibbs

Research output: Contribution to journalArticle

62 Scopus citations

Abstract

A triplet around the third harmonic of the semiconductor band gap was observed when exciting 50-100 nm thin films GaAs films with 5 fs pulses at 3 × 1022 W/cm2. It was shown that this triplet in the optical spectrum was a result of light-induced gaps in the band structure, which arise from coherent band mixing. The 5 fs linearly polarized optical pulses from a Ti:sapphire mode-locked laser oscillator were employed which focused onto the GaAs film, held at room temperature, by means of a high numerical aperture reflective microscope objective. The GaAs layers of thickness l were grown directly on sapphire substrate in a molecular-beam epitaxy machine.

Original languageEnglish (US)
Article number217403
Pages (from-to)217403-1-217403-4
JournalPhysical review letters
Volume92
Issue number21
DOIs
StatePublished - May 28 2004

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Light-induced gaps in semiconductor band-to-band transitions'. Together they form a unique fingerprint.

  • Cite this

    Vu, Q. T., Haug, H., Mücke, O. D., Tritschler, T., Wegener, M., Khitrova, G., & Gibbs, H. M. (2004). Light-induced gaps in semiconductor band-to-band transitions. Physical review letters, 92(21), 217403-1-217403-4. [217403]. https://doi.org/10.1103/PhysRevLett.92.217403