Light-induced gaps in semiconductor band-to-band transitions

Q. T. Vu, H. Haug, O. D. Mücke, T. Tritschler, M. Wegener, Galina Khitrova, H. M. Gibbs

Research output: Contribution to journalArticle

61 Citations (Scopus)

Abstract

A triplet around the third harmonic of the semiconductor band gap was observed when exciting 50-100 nm thin films GaAs films with 5 fs pulses at 3 × 1022 W/cm2. It was shown that this triplet in the optical spectrum was a result of light-induced gaps in the band structure, which arise from coherent band mixing. The 5 fs linearly polarized optical pulses from a Ti:sapphire mode-locked laser oscillator were employed which focused onto the GaAs film, held at room temperature, by means of a high numerical aperture reflective microscope objective. The GaAs layers of thickness l were grown directly on sapphire substrate in a molecular-beam epitaxy machine.

Original languageEnglish (US)
Pages (from-to)217403-217401
Number of pages3
JournalPhysical Review Letters
Volume92
Issue number21
DOIs
StatePublished - May 28 2004

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sapphire
numerical aperture
pulses
optical spectrum
molecular beam epitaxy
microscopes
oscillators
harmonics
room temperature
thin films
lasers

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Vu, Q. T., Haug, H., Mücke, O. D., Tritschler, T., Wegener, M., Khitrova, G., & Gibbs, H. M. (2004). Light-induced gaps in semiconductor band-to-band transitions. Physical Review Letters, 92(21), 217403-217401. https://doi.org/10.1103/PhysRevLett.92.217403

Light-induced gaps in semiconductor band-to-band transitions. / Vu, Q. T.; Haug, H.; Mücke, O. D.; Tritschler, T.; Wegener, M.; Khitrova, Galina; Gibbs, H. M.

In: Physical Review Letters, Vol. 92, No. 21, 28.05.2004, p. 217403-217401.

Research output: Contribution to journalArticle

Vu, QT, Haug, H, Mücke, OD, Tritschler, T, Wegener, M, Khitrova, G & Gibbs, HM 2004, 'Light-induced gaps in semiconductor band-to-band transitions', Physical Review Letters, vol. 92, no. 21, pp. 217403-217401. https://doi.org/10.1103/PhysRevLett.92.217403
Vu QT, Haug H, Mücke OD, Tritschler T, Wegener M, Khitrova G et al. Light-induced gaps in semiconductor band-to-band transitions. Physical Review Letters. 2004 May 28;92(21):217403-217401. https://doi.org/10.1103/PhysRevLett.92.217403
Vu, Q. T. ; Haug, H. ; Mücke, O. D. ; Tritschler, T. ; Wegener, M. ; Khitrova, Galina ; Gibbs, H. M. / Light-induced gaps in semiconductor band-to-band transitions. In: Physical Review Letters. 2004 ; Vol. 92, No. 21. pp. 217403-217401.
@article{9d7d5b66cd8e43ca8d60c851933a7880,
title = "Light-induced gaps in semiconductor band-to-band transitions",
abstract = "A triplet around the third harmonic of the semiconductor band gap was observed when exciting 50-100 nm thin films GaAs films with 5 fs pulses at 3 × 1022 W/cm2. It was shown that this triplet in the optical spectrum was a result of light-induced gaps in the band structure, which arise from coherent band mixing. The 5 fs linearly polarized optical pulses from a Ti:sapphire mode-locked laser oscillator were employed which focused onto the GaAs film, held at room temperature, by means of a high numerical aperture reflective microscope objective. The GaAs layers of thickness l were grown directly on sapphire substrate in a molecular-beam epitaxy machine.",
author = "Vu, {Q. T.} and H. Haug and M{\"u}cke, {O. D.} and T. Tritschler and M. Wegener and Galina Khitrova and Gibbs, {H. M.}",
year = "2004",
month = "5",
day = "28",
doi = "10.1103/PhysRevLett.92.217403",
language = "English (US)",
volume = "92",
pages = "217403--217401",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "21",

}

TY - JOUR

T1 - Light-induced gaps in semiconductor band-to-band transitions

AU - Vu, Q. T.

AU - Haug, H.

AU - Mücke, O. D.

AU - Tritschler, T.

AU - Wegener, M.

AU - Khitrova, Galina

AU - Gibbs, H. M.

PY - 2004/5/28

Y1 - 2004/5/28

N2 - A triplet around the third harmonic of the semiconductor band gap was observed when exciting 50-100 nm thin films GaAs films with 5 fs pulses at 3 × 1022 W/cm2. It was shown that this triplet in the optical spectrum was a result of light-induced gaps in the band structure, which arise from coherent band mixing. The 5 fs linearly polarized optical pulses from a Ti:sapphire mode-locked laser oscillator were employed which focused onto the GaAs film, held at room temperature, by means of a high numerical aperture reflective microscope objective. The GaAs layers of thickness l were grown directly on sapphire substrate in a molecular-beam epitaxy machine.

AB - A triplet around the third harmonic of the semiconductor band gap was observed when exciting 50-100 nm thin films GaAs films with 5 fs pulses at 3 × 1022 W/cm2. It was shown that this triplet in the optical spectrum was a result of light-induced gaps in the band structure, which arise from coherent band mixing. The 5 fs linearly polarized optical pulses from a Ti:sapphire mode-locked laser oscillator were employed which focused onto the GaAs film, held at room temperature, by means of a high numerical aperture reflective microscope objective. The GaAs layers of thickness l were grown directly on sapphire substrate in a molecular-beam epitaxy machine.

UR - http://www.scopus.com/inward/record.url?scp=3142512686&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3142512686&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.92.217403

DO - 10.1103/PhysRevLett.92.217403

M3 - Article

C2 - 15245317

AN - SCOPUS:3142512686

VL - 92

SP - 217403

EP - 217401

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 21

ER -