Light-polarization dynamics in surface-emitting semiconductor lasers

M. San Miguel, Q. Feng, Jerome V Moloney

Research output: Contribution to journalArticle

599 Citations (Scopus)

Abstract

A four-level model which takes account of the polarization of the laser field by including the spin sublevels of the conduction and valence bands of a semiconductor allows us to introduce vector rate equations which account for the polarization degree of freedom of the laser emission. Analysis of these rate equations and their extension to include transverse degrees of freedom provides important physical insight into the nature of polarization instabilities in surface-emitting semiconductor lasers. In the absence of transverse effects the model predicts a marginally stable linearly polarized state. The type of dynamical response of the polarization degrees of freedom is linked to the relative time scale of spontaneous-emission and spin-relaxation processes. With transverse effects included, we predict the existence of stable transverse spatially homogeneous intensity outputs with arbitrary direction of linear polarization in the transverse plane. The stability of the off-axis emission solutions to long-wavelength perturbations is investigated and, in addition to an Eckhaus instability associated with a global phase, we predict a polarization instability associated with a relative phase of the complex field vector. The role of phase anisotropy in the laser cavity is explored close to threshold and we predict that it stabilizes two preferred orthogonal directions of polarization, which, however, are discriminated in their stability properties by transverse effects.

Original languageEnglish (US)
Pages (from-to)1728-1739
Number of pages12
JournalPhysical Review A
Volume52
Issue number2
DOIs
StatePublished - 1995

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surface emitting lasers
semiconductor lasers
polarization
degrees of freedom
laser cavities
linear polarization
spontaneous emission
lasers
conduction bands
valence
perturbation
anisotropy
thresholds
output
wavelengths

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Atomic and Molecular Physics, and Optics

Cite this

Light-polarization dynamics in surface-emitting semiconductor lasers. / San Miguel, M.; Feng, Q.; Moloney, Jerome V.

In: Physical Review A, Vol. 52, No. 2, 1995, p. 1728-1739.

Research output: Contribution to journalArticle

San Miguel, M. ; Feng, Q. ; Moloney, Jerome V. / Light-polarization dynamics in surface-emitting semiconductor lasers. In: Physical Review A. 1995 ; Vol. 52, No. 2. pp. 1728-1739.
@article{556bbfaa05f64f938f1fb27c17232bf6,
title = "Light-polarization dynamics in surface-emitting semiconductor lasers",
abstract = "A four-level model which takes account of the polarization of the laser field by including the spin sublevels of the conduction and valence bands of a semiconductor allows us to introduce vector rate equations which account for the polarization degree of freedom of the laser emission. Analysis of these rate equations and their extension to include transverse degrees of freedom provides important physical insight into the nature of polarization instabilities in surface-emitting semiconductor lasers. In the absence of transverse effects the model predicts a marginally stable linearly polarized state. The type of dynamical response of the polarization degrees of freedom is linked to the relative time scale of spontaneous-emission and spin-relaxation processes. With transverse effects included, we predict the existence of stable transverse spatially homogeneous intensity outputs with arbitrary direction of linear polarization in the transverse plane. The stability of the off-axis emission solutions to long-wavelength perturbations is investigated and, in addition to an Eckhaus instability associated with a global phase, we predict a polarization instability associated with a relative phase of the complex field vector. The role of phase anisotropy in the laser cavity is explored close to threshold and we predict that it stabilizes two preferred orthogonal directions of polarization, which, however, are discriminated in their stability properties by transverse effects.",
author = "{San Miguel}, M. and Q. Feng and Moloney, {Jerome V}",
year = "1995",
doi = "10.1103/PhysRevA.52.1728",
language = "English (US)",
volume = "52",
pages = "1728--1739",
journal = "Physical Review A",
issn = "2469-9926",
publisher = "American Physical Society",
number = "2",

}

TY - JOUR

T1 - Light-polarization dynamics in surface-emitting semiconductor lasers

AU - San Miguel, M.

AU - Feng, Q.

AU - Moloney, Jerome V

PY - 1995

Y1 - 1995

N2 - A four-level model which takes account of the polarization of the laser field by including the spin sublevels of the conduction and valence bands of a semiconductor allows us to introduce vector rate equations which account for the polarization degree of freedom of the laser emission. Analysis of these rate equations and their extension to include transverse degrees of freedom provides important physical insight into the nature of polarization instabilities in surface-emitting semiconductor lasers. In the absence of transverse effects the model predicts a marginally stable linearly polarized state. The type of dynamical response of the polarization degrees of freedom is linked to the relative time scale of spontaneous-emission and spin-relaxation processes. With transverse effects included, we predict the existence of stable transverse spatially homogeneous intensity outputs with arbitrary direction of linear polarization in the transverse plane. The stability of the off-axis emission solutions to long-wavelength perturbations is investigated and, in addition to an Eckhaus instability associated with a global phase, we predict a polarization instability associated with a relative phase of the complex field vector. The role of phase anisotropy in the laser cavity is explored close to threshold and we predict that it stabilizes two preferred orthogonal directions of polarization, which, however, are discriminated in their stability properties by transverse effects.

AB - A four-level model which takes account of the polarization of the laser field by including the spin sublevels of the conduction and valence bands of a semiconductor allows us to introduce vector rate equations which account for the polarization degree of freedom of the laser emission. Analysis of these rate equations and their extension to include transverse degrees of freedom provides important physical insight into the nature of polarization instabilities in surface-emitting semiconductor lasers. In the absence of transverse effects the model predicts a marginally stable linearly polarized state. The type of dynamical response of the polarization degrees of freedom is linked to the relative time scale of spontaneous-emission and spin-relaxation processes. With transverse effects included, we predict the existence of stable transverse spatially homogeneous intensity outputs with arbitrary direction of linear polarization in the transverse plane. The stability of the off-axis emission solutions to long-wavelength perturbations is investigated and, in addition to an Eckhaus instability associated with a global phase, we predict a polarization instability associated with a relative phase of the complex field vector. The role of phase anisotropy in the laser cavity is explored close to threshold and we predict that it stabilizes two preferred orthogonal directions of polarization, which, however, are discriminated in their stability properties by transverse effects.

UR - http://www.scopus.com/inward/record.url?scp=0029360230&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029360230&partnerID=8YFLogxK

U2 - 10.1103/PhysRevA.52.1728

DO - 10.1103/PhysRevA.52.1728

M3 - Article

AN - SCOPUS:0029360230

VL - 52

SP - 1728

EP - 1739

JO - Physical Review A

JF - Physical Review A

SN - 2469-9926

IS - 2

ER -