Linear electrooptic coefficient of InP nanowires

Clint J. Novotny, Christopher T. DeRose, Robert A. Norwood, Paul K.L. Yu

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

A novel fabrication procedure is developed that allows for the direct measurement of the linear electrooptic coefficient of semiconducting nanowires to determine their viability for use in electrooptic devices. Vertically aligned InP nanowires are transferred from their growth substrate to a glass substrate using a host polymer, while still retaining the alignment of the nanowires. The linear electrooptic coefficient of the InP nanowires exhibited a 1-2 orders of magnitude enhancement over bulk InP and ranged from 31 to 147 pm/V. The figure of merit, n 3r, exhibited a factor of 20 enhancement over lithium niobate and ranged from 1010 to 4817 pm/V.

Original languageEnglish (US)
Pages (from-to)1020-1025
Number of pages6
JournalNano Letters
Volume8
Issue number4
DOIs
StatePublished - Apr 1 2008

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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    Novotny, C. J., DeRose, C. T., Norwood, R. A., & Yu, P. K. L. (2008). Linear electrooptic coefficient of InP nanowires. Nano Letters, 8(4), 1020-1025. https://doi.org/10.1021/nl072688k